High-temperature optically pumped lasing in ZnMgSSe/ZnSe heterostructures grown by metalorganic vapor phase epitaxy

Vapor Phase Epitaxy ◽

Optically Pumped

Improved High-Temperature and High-Power Characteristics of 1.3-µm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers

10.1143/jjap.38.1234 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1234-1238 ◽

Cited By ~ 3

Author(s):

Yuji Furushima ◽

Hiroyuki Yamazaki ◽

Koji Kudo ◽

Yasutaka Sakata ◽

Yuichiro Okunuki ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

High Power ◽

Laser Diodes ◽

Spot Size ◽

Vapor Phase Epitaxy ◽

Power Characteristics ◽

Heterostructure Laser ◽

Buried Heterostructure

Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

10.1143/jjap.46.l307 ◽

2007 ◽

Vol 46 (No. 14) ◽

pp. L307-L310 ◽

Cited By ~ 34

Author(s):

Krishnan Balakrishnan ◽

Akria Bandoh ◽

Motoaki Iwaya ◽

Satoshi Kamiyama ◽

Hiroshi Amano ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Dislocation Content

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

Low-threshold and high-temperature characteristics of 1.3-μm InGaAlAs MQW lasers grown by metalorganic vapor-phase epitaxy

10.1109/iciprm.2000.850283 ◽

2002 ◽

Cited By ~ 2

Author(s):

T. Tsuchiya ◽

D. Takemoto ◽

T. Sudou ◽

M. Aoki

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Temperature Characteristics ◽

Low Threshold

Optically Pumped Stimulated Emission from $\bf CuGa(S_{0.65}Se_{0.35})_{2}/CuAl_{0.3}Ga_{0.7}(S_{0.65}Se_{0.35})_{2}$ Double Heterostructure Grown by Metalorganic Vapor Phase Epitaxy

10.1143/jjap.33.l624 ◽

1994 ◽

Vol 33 (Part 2, No. 5A) ◽

pp. L624-L626 ◽

Cited By ~ 7

Author(s):

Masahiro Yamamoto ◽

Takeshi Ogawa ◽

Kazuhiko Hara ◽

Junji Yoshino ◽

Hiroshi Kukimoto

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Stimulated Emission ◽

Optically Pumped ◽

Double Heterostructure

Iodine Doping in ZnSe in High-Temperature Range by Metalorganic Vapor-Phase Epitaxy

10.1143/jjap.32.l524 ◽

1993 ◽

Vol 32 (Part 2, No. 4A) ◽

pp. L524-L527 ◽

Cited By ~ 8

Author(s):

Masahiro Fujimoto ◽

Ikuo Suemune ◽

Hirofumi Osaka ◽

Yoshihisa Fujii

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Iodine Doping ◽

High Temperature Range ◽

Temperature Range

Pulsed- and continuous-mode operation at high temperature of strained quantum-cascade lasers grown by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.2166206 ◽

2006 ◽

Vol 88 (4) ◽

pp. 041102 ◽

Cited By ~ 14

Author(s):

L. Diehl ◽

D. Bour ◽

S. Corzine ◽

J. Zhu ◽

G. Höfler ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Quantum Cascade Lasers ◽

Vapor Phase Epitaxy ◽

Continuous Mode ◽

Quantum Cascade ◽

Mode Operation ◽

Cascade Lasers

High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy

10.1143/jjap.48.011102 ◽

2009 ◽

Vol 48 (1) ◽

pp. 011102 ◽

Cited By ~ 8

Author(s):

Yasushi Takano ◽

Kenta Morizumi ◽

Satoshi Watanabe ◽

Hiroyuki Masuda ◽

Takuya Okamoto ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Temperature Growth ◽

Si Substrates

Effect of high temperature homoepitaxial growth of β-Ga2O3 by hot-wall metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2022.126520 ◽

2022 ◽

pp. 126520

Author(s):

Kazutada Ikenaga ◽

Nami Tanaka ◽

Taro Nishimura ◽

Hirotaka Iino ◽

Ken Goto ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Homoepitaxial Growth

Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy

10.7567/1347-4065/ab0cfc ◽

2019 ◽

Vol 58 (SC) ◽

pp. SC1002 ◽

Cited By ~ 13

Author(s):

Sebastian Walde ◽

Sylvia Hagedorn ◽

Markus Weyers

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

High Temperature Annealing

Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth

CrystEngComm ◽

10.1039/c8ce01473f ◽

2018 ◽

Vol 20 (45) ◽

pp. 7364-7370 ◽

Cited By ~ 3

Author(s):

Xu-Qiang Shen ◽

Kazutoshi Kojima ◽

Mitsuaki Shimizu ◽

Hajime Okumura

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

High Quality ◽

Growth Technique ◽

New Approach

We propose a new growth technique, ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE), for high quality AlN growth.