Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 1162-1167 ◽  
Author(s):  
Nan-Jian Wu ◽  
Tamotsu Hashizume ◽  
Hideki Hasegawa ◽  
Yoshihito Amemiya
Keyword(s):  
Fermi Level ◽  
Electrochemical Process ◽  
Schottky Contacts ◽  
Fermi Level Pinning ◽  
Barrier Heights

Characterization of SiGeC Using Pt(SiGeC) Silicide Schottky Contacts

1998 ◽  
Vol 533 ◽  
Author(s):  
Jeff J. Peterson ◽  
Charles E. Hunt ◽  
McDonald Robinson ◽  
Robin SCott
Keyword(s):  
Fermi Level ◽  
Conduction Band ◽  
Electrical Characterization ◽  
Schottky Contacts ◽  
Epitaxial Layers ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Xrd Studies ◽  
P Type

AbstractMaterial and electrical characterization of n-type and p-type Si1-x-yGex Cy epitaxial layers on Si(100) was performed using silicided platinum Schottky contacts. XRD studies show Pt silcidation of SiGeC proceeds from non-reacted Pt to Pt2(SiGeC) and completes with the Pt(SiGeC) phase similar to Pt/Si silicides, but Pt silicide reactions with SiGeC are shown to require higher temperatures than Pt reactions with Si. Electrical characterization of Pt(SiGeC) contacts to n-type Sil1-x-yGexCx/Si shows rectifying behavior with constant barrier heights of 0.67eV independent of composition, indicating Fermi level pinning relative to the SiGeC conduction band is occurring. Pt(SiGeC) contacts to p-type Si1-x-yGexCy/Si are also rectifying with barrier heights that track the variation of the SiGeC energy bandgap.

Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1−xGex layers

1999 ◽  
Vol 86 (12) ◽  
pp. 6890-6894 ◽  
Author(s):  
M. Mamor ◽  
O. Nur ◽  
M. Karlsteen ◽  
M. Willander ◽  
F. D. Auret
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Fermi Level Pinning ◽  
Barrier Heights

Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1811-1817 ◽  
Author(s):  
Taketomo Sato ◽  
Shouichi Uno ◽  
Tamotsu Hashizume ◽  
Hideki Hasegawa
Keyword(s):  
Indium Phosphide ◽  
Schottky Barrier ◽  
Electrochemical Process ◽  
Barrier Heights

Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP

1994 ◽  
Vol 340 ◽  
Author(s):  
V.A. Gorbyley ◽  
A.A. Chelniy ◽  
A.A. Chekalin ◽  
A.Y. Polyakov ◽  
S.J. Pearon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Fermi Level ◽  
Plasma Treatment ◽  
Schottky Barrier ◽  
Hydrogen Plasma ◽  
Schottky Diodes ◽  
Schottky Barriers ◽  
Quantum Well Structures ◽  
Fermi Level Pinning ◽  
Barrier Heights

ABSTRACTIt is shown that in Au/InGaP and Au/InGaAlP Schottky diodes the Fermi level is pinned by metal-deposition-induced midgap states. Hydrogen plasma treatment of such diodes greatly improves the reverse currents. The measured Schottky barrier heights seem to correlate with the valence band offsets measured by DLTS on quantum well structures.

Fermi level pinning by metal Schottky contacts on n type GaAs

1998 ◽  
Vol 14 (12) ◽  
pp. 1269-1272
Author(s):  
G. Myburg ◽  
W. E. Meyer ◽  
F. D. Auret ◽  
H. Burger ◽  
W. O. Barnard
Keyword(s):  
Fermi Level ◽  
Schottky Contacts ◽  
Fermi Level Pinning
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