Low-Energy Focused Ion Beam Doping during Molecular Beam Epitaxial Growth for the Fabrication of Three-Dimensional Devices: The Effect of Dopant Surface Segregation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Use of very low energy in situ focused ion beams for three-dimensional dopant patterning during molecular beam epitaxial growth

10.1116/1.588698 ◽

1996 ◽

Vol 14 (6) ◽

pp. 3933 ◽

Cited By ~ 6

Author(s):

P. J. A. Sazio

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Three Dimensional ◽

Ion Beams ◽

Low Energy ◽

Focused Ion Beams ◽

Molecular beam epitaxial growth of III‐V compound semiconductor in the presence of a low‐energy ion beam: A Monte Carlo simulation study

Applied Physics Letters ◽

10.1063/1.98829 ◽

1987 ◽

Vol 51 (11) ◽

pp. 837-839 ◽

Cited By ~ 10

Author(s):

S. B. Ogale ◽

A. Madhukar ◽

M. Thomsen

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Epitaxial Growth ◽

Molecular Beam ◽

Ion Beam ◽

Compound Semiconductor ◽

Low Energy ◽

Monte Carlo Simulation Study ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Independently contacted electron–hole gas heterostructures fabricated with focused ion beam doping during molecular beam epitaxial growth

10.1116/1.590986 ◽

1999 ◽

Vol 17 (6) ◽

pp. 3226 ◽

Cited By ~ 10

Author(s):

S. Vijendran ◽

P. J. A. Sazio ◽

H. E. Beere ◽

G. A. C. Jones ◽

D. A. Ritchie ◽

...

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Electron Hole ◽

Selective area epitaxy of GaAs using very low energy Ga+ focused ion beam deposition combined with molecular beam epitaxial growth

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)01028-7 ◽

1997 ◽

Vol 175-176 ◽

pp. 398-403 ◽

Cited By ~ 7

Author(s):

H.E. Beere ◽

J.H. Thompson ◽

G.A.C. Jones ◽

D.A. Ritchie

Keyword(s):

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Low Energy ◽

Selective Area Epitaxy ◽

Ion Beam Deposition ◽

Selective Area ◽

Molecular Beam Epitaxial Growth ◽

Beam Deposition

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Fabrication of in situ Ohmic contacts patterned in three dimensions using a focused ion beam during molecular beam epitaxial growth

10.1116/1.589641 ◽

1997 ◽

Vol 15 (6) ◽

pp. 2337 ◽

Cited By ~ 5

Author(s):

P. J. A. Sazio

Keyword(s):

Epitaxial Growth ◽

Ohmic Contacts ◽

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Three Dimensions ◽

Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth

Journal of Applied Physics ◽

10.1063/1.365785 ◽

1997 ◽

Vol 82 (2) ◽

pp. 859-864 ◽

Cited By ~ 17

Author(s):

A. Kalburge ◽

A. Konkar ◽

T. R. Ramachandran ◽

P. Chen ◽

A. Madhukar

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

Applied Physics Letters ◽

10.1063/1.106412 ◽

1991 ◽

Vol 59 (17) ◽

pp. 2103-2105 ◽

Cited By ~ 188

Author(s):

S. Fukatsu ◽

K. Fujita ◽

H. Yaguchi ◽

Y. Shiraki ◽

R. Ito

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Surface Segregation ◽

Selective area two-dimensional electron gas structures and in situ ohmic contacts patterned by focused ion beam doping during molecular beam epitaxial growth

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90722-9 ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 732-736 ◽

Cited By ~ 10

Author(s):

J.H. Thompson ◽

G.A.C. Jones ◽

D.A. Ritchie ◽

E.H. Linfield ◽

M. Houlton ◽

...

Keyword(s):

Ohmic Contacts ◽

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Dimensional Electron ◽

Selective Area ◽

Dimensional Electron Gas ◽

Arsenic surface segregation during the molecular-beam epitaxial growth of GaAs embedded in wurtzite GaN

Applied Physics Letters ◽

10.1063/1.1489476 ◽

2002 ◽

Vol 80 (25) ◽

pp. 4768-4770 ◽

Cited By ~ 7

Author(s):

Hyonju Kim ◽

T. G. Andersson

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Surface Segregation ◽

Molecular beam epitaxial growth of GaN using ammonia cluster ion beam as a nitrogen source

physica status solidi (c) ◽

10.1002/pssc.200405021 ◽

2004 ◽

Vol 1 (10) ◽

pp. 2478-2482 ◽

Cited By ~ 4

Author(s):

H. Saito ◽

M. Taguchi ◽

M. Ohishi ◽

M. Yoneta ◽

K. Imai

Keyword(s):

Nitrogen Source ◽

Epitaxial Growth ◽

Molecular Beam ◽

Ion Beam ◽

Cluster Ion ◽