Molecular beam epitaxial growth of III‐V compound semiconductor in the presence of a low‐energy ion beam: A Monte Carlo simulation study

1987 ◽  
Vol 51 (11) ◽  
pp. 837-839 ◽  
Author(s):  
S. B. Ogale ◽  
A. Madhukar ◽  
M. Thomsen
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Ion Beam ◽  
Compound Semiconductor ◽  
Low Energy ◽  
Monte Carlo Simulation Study ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of GaN using ammonia cluster ion beam as a nitrogen source

2004 ◽  
Vol 1 (10) ◽  
pp. 2478-2482 ◽  
Author(s):  
H. Saito ◽  
M. Taguchi ◽  
M. Ohishi ◽  
M. Yoneta ◽  
K. Imai
Keyword(s):  
Nitrogen Source ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Ion Beam ◽  
Molecular Beam Epitaxial ◽  
Cluster Ion ◽  
Molecular Beam Epitaxial Growth
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