Selective area two-dimensional electron gas structures and in situ ohmic contacts patterned by focused ion beam doping during molecular beam epitaxial growth

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90722-9 ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 732-736 ◽

Author(s):

J.H. Thompson ◽

G.A.C. Jones ◽

D.A. Ritchie ◽

E.H. Linfield ◽

M. Houlton ◽

...

Keyword(s):

Ohmic Contacts ◽

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Dimensional Electron ◽

Molecular Beam Epitaxial ◽

Selective Area ◽

Dimensional Electron Gas ◽

Molecular Beam Epitaxial Growth

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Fabrication of in situ Ohmic contacts patterned in three dimensions using a focused ion beam during molecular beam epitaxial growth

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589641 ◽

1997 ◽

Vol 15 (6) ◽

pp. 2337 ◽

Author(s):

P. J. A. Sazio

Keyword(s):

Epitaxial Growth ◽

Ohmic Contacts ◽

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Three Dimensions ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Selective area epitaxy of GaAs using very low energy Ga+ focused ion beam deposition combined with molecular beam epitaxial growth

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)01028-7 ◽

1997 ◽

Vol 175-176 ◽

pp. 398-403 ◽

Author(s):

H.E. Beere ◽

J.H. Thompson ◽

G.A.C. Jones ◽

D.A. Ritchie

Keyword(s):

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Selective Area Epitaxy ◽

Molecular Beam Epitaxial ◽

Ion Beam Deposition ◽

Selective Area ◽

Molecular Beam Epitaxial Growth ◽

Beam Deposition

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Transport properties of a two-dimensional electron gas closely separated from an underlying n+ GaAs layer: The fabrication of independent ohmic contacts using molecular beam epitaxial regrowth and in situ focused ion beams

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586905 ◽

1993 ◽

Vol 11 (3) ◽

pp. 982 ◽

Author(s):

E. H. Linfield

Keyword(s):

Ohmic Contacts ◽

Molecular Beam ◽

Electron Gas ◽

Focused Ion Beams ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Molecular Beam Epitaxial ◽

Dimensional Electron Gas

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Independently contacted electron–hole gas heterostructures fabricated with focused ion beam doping during molecular beam epitaxial growth

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590986 ◽

1999 ◽

Vol 17 (6) ◽

pp. 3226 ◽

Author(s):

S. Vijendran ◽

P. J. A. Sazio ◽

H. E. Beere ◽

G. A. C. Jones ◽

D. A. Ritchie ◽

...

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Electron Hole ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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In situ two-dimensional electron gas fabrication by focused Si ion beam implantation and molecular beam epitaxy overgrowth

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585670 ◽

1991 ◽

Vol 9 (5) ◽

pp. 2675 ◽

Author(s):

H. Arimoto

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ion Beam ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Ion Beam Implantation ◽

Dimensional Electron Gas

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Fabrication of a novel split-backgate transistor by in situ focused ion-beam lithography and molecular-beam epitaxial regrowth

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586653 ◽

1993 ◽

Vol 11 (6) ◽

pp. 2493 ◽

Author(s):

K. M. Brown

Keyword(s):

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Ion Beam Lithography ◽

Molecular Beam Epitaxial ◽

Epitaxial Regrowth

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Fabrication of independent contacts to two closely spaced two-dimensional electron gases using molecular beam epitaxy regrowth and in situ focused ion beam lithography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587026 ◽

1994 ◽

Vol 12 (2) ◽

pp. 1293 ◽

Author(s):

K. M. Brown

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

Ion Beam Lithography

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Molecular‐beam‐epitaxial growth ofn‐AlGaAs on clean Cl2‐gas etched GaAs surfaces and the formation of high mobility two‐dimensional electron gas at the etch‐regrown interfaces

Applied Physics Letters ◽

10.1063/1.108496 ◽

1992 ◽

Vol 61 (14) ◽

pp. 1658-1660 ◽

Author(s):

Y. Kadoya ◽

H. Noge ◽

H. Kano ◽

H. Sakaki ◽

N. Ikoma ◽

...

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Electron Gas ◽

High Mobility ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Molecular Beam Epitaxial ◽

Dimensional Electron Gas ◽

Molecular Beam Epitaxial Growth

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Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth

Journal of Applied Physics ◽

10.1063/1.365785 ◽

1997 ◽

Vol 82 (2) ◽

pp. 859-864 ◽

Author(s):

A. Kalburge ◽

A. Konkar ◽

T. R. Ramachandran ◽

P. Chen ◽

A. Madhukar

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583751 ◽

1987 ◽

Vol 5 (3) ◽

pp. 785 ◽

Author(s):

H. T. Griem

Keyword(s):

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Electron Gas ◽

Dimensional Electron ◽

Gas Field ◽

Molecular Beam Epitaxial ◽

Dimensional Electron Gas ◽

Molecular Beam Epitaxial Growth

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