Fabrication of Highly Stable and Low Defect Density Amorphous Silicon Films at Low Substrate Temperature by Plasma Chemical Vapor Deposition Assisted with Piezoelectric Vibration

1995 ◽  
Vol 34 (Part 2, No. 1B) ◽  
pp. L97-L100 ◽  
Author(s):  
Masatomo Sumiya ◽  
Masashi Kawasaki ◽  
Jan Ko\vcka ◽  
HideomiKoinuma
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Defect Density ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Piezoelectric Vibration

Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

2007 ◽  
Vol 22 (5) ◽  
pp. 1275-1280 ◽  
Author(s):  
Y. Morikawa ◽  
M. Hirai ◽  
A. Ohi ◽  
M. Kusaka ◽  
M. Iwami
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Single Molecule ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Film

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface

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