Solid-Phase Reactions of Diffusion Barriers of Ti and TiN to Copper Layers onSiO2

1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 4027-4033 ◽  
Author(s):  
Mayumi Takeyama ◽  
Atsushi Noya ◽  
Kouichirou Sakanishi ◽  
Hikaru Seki ◽  
Katsutaka Sasaki
1997 ◽  
Vol 42 (11) ◽  
pp. 1270-1274
Author(s):  
A. I. Baranov ◽  
N. I. Boyarkina ◽  
A. V. Vasil’ev

2004 ◽  
Vol 461 (1) ◽  
pp. 81-85 ◽  
Author(s):  
C.H Yu ◽  
Y.L Chueh ◽  
S.W Lee ◽  
S.L Cheng ◽  
L.J Chen ◽  
...  

2021 ◽  
pp. 2150469
Author(s):  
T. G. Naghiyev ◽  
R. M. Rzayev

The solid solutions of [Formula: see text] were synthesized by solid-phase reactions from powder components of CaS, BaS, and Ga2S3. The temperature-concentration dependences of the Gibbs free energy of formation of [Formula: see text] solid solutions from ternary compounds and phase diagrams of the CaGa2S4–BaGa2S4 were determined by a calculation method. It was revealed that continuous solid solutions are formed in these systems. The spinodal decomposition of [Formula: see text] solid solutions into two phases is predicted at ordinary temperatures.


1991 ◽  
Vol 69 (10) ◽  
pp. 7050-7056 ◽  
Author(s):  
T. Yamauchi ◽  
S. Zaima ◽  
K. Mizuno ◽  
H. Kitamura ◽  
Y. Koide ◽  
...  

2021 ◽  
Vol 63 (3) ◽  
pp. 400
Author(s):  
А.В. Назаренко ◽  
А.В. Павленко ◽  
К.Г. Абдулвахидов

Solid solution ceramics of the YCuxMn1-xO3 system at x = 0.05; 0.10; 0.15 were prepared by solid-phase reactions followed by sintering using conventional ceramic technology. The study of their structure, microstructure and dielectric properties including of temperature and frequencies investigation of dielectric permittivity, conductivity and tangent of dielectric loses is carried out. It is established that hexagonal phase is predominantly formed in the ceramics. Its grain structure is unhomogenius, while synthesis is performed with the formation of liquid phases of eutectic origin. It is shown that anomalous behavior of dielectric characteristics at Т=30-200 ºС connected to interlayer polarization effects, while features at Т = 222 ºС (x = 0.05), 234 ºС (x = 0.10) and 247 ºС (x = 0.15) we connected to “isostructural” phase transition that is intermediate between the ferroelectric and paraelectric phases.


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