Substrate Engineering for Reduction of Alpha-Particle-Induced Charge Collection Efficiency

Defects in electron-irradiated 6H-SiC diodes have been studied by single alpha particle induced charge transient spectroscopy and deep level transient spectroscopy (DLTS) in order to identify critical defects responsible for the charge collection efficiency (CCE) decreased by high-energy electron irradiation. The defect X2 detected by the charge transient spectroscopy and the electron trap Ei detected by the DLTS had a similar activation energy of around 0.50 eV. In addition, the annealing at 200oC completely removed defects X2 and Ei, and restored the CCE. The defect X2 is attributed to the electron trap Ei, and responsible for the decreased CCE.

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Suggesting a Reliable Method of Calculating Charge Collection Efficiency in Charge-transfer Measurement for Brush Discharges

10.31237/osf.io/ac6gs ◽

2019 ◽

Author(s):

Nirmalya Basu

Keyword(s):

Mathematical Model ◽

Charge Transfer ◽

Reliable Method ◽

Collection Efficiency ◽

Fast Response ◽

Charge Collection ◽

Charge Collection Efficiency ◽

Transfer Measurement ◽

Induced Charge ◽

The Mathematical Model

Induced charge errors lead to underestimation of transferred charge in brush discharges when the measurement is done using fast-response unshielded probes. The discrepancy observed between the values of charge-collection efficiency for different charge-transfer thresholds obtained theoretically by Walmsley [2] and those obtained experimentally by Chowdhury et al [3] necessitates figuring out ways to improve the mathematical model used by Walmsley. A close perusal of the said work by Walmsley [2] has pointed out an error therein– in the use of the equation reff = KD. I propose here a way to get rid of this error, and in doing so, I propose a method of calculating the charge-collection efficiency in charge-transfer measurement for brush discharges more reliable than that used by Walmsley [2].

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CHARACTERISTICS OF CVD DIAMOND FILMS IN DETECTING UV, X-RAY AND ALPHA PARTICLE

International Journal of Modern Physics B ◽

10.1142/s0217979202010798 ◽

2002 ◽

Vol 16 (06n07) ◽

pp. 1018-1023 ◽

Cited By ~ 1

Author(s):

J. AHN ◽

B. GAN ◽

Q. ZHANG ◽

S. F. YOON ◽

V. LIGATCHEV ◽

...

Keyword(s):

Visible Light ◽

Alpha Particle ◽

Uv Light ◽

Collection Efficiency ◽

Ion Beam ◽

Response Speed ◽

Cvd Diamond ◽

Charge Collection ◽

Charge Collection Efficiency ◽

X Ray

The CVD diamond UV photodetector shows more than four orders of photoresponsivity discrimination between UV and visible light. Post-treatment on as-fabricated photodetector is essential for a good response to UV light and blindness to visible light. The CVD diamond X-ray detector shows linear dependence of photocurrent on X-ray intensity and high response speed. The mapping of charge collection efficiency on the whole sensing area of a CVD diamond alpha particle detector has been obtained using ion-beam-induced charge microscopy technique. Three peaks have been observed in the charge collection spectrum.

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