Reduction of Point Defects and Formation of Abrupt Hetero-Interfaces in Low-Temperature Molecular Beam Epitaxy of GaAs and GaP under Atomic Hydrogen Irradiation

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4726-4731 ◽  
Author(s):  
Mikihiro Yokozeki ◽  
Hiroo Yonezu ◽  
Takuto Tsuji ◽  
Kazuya Aizawa ◽  
Naoki Ohshima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Point Defects ◽  
Atomic Hydrogen ◽  
Molecular Beam

Point defects in III–V materials grown by molecular beam epitaxy at low temperature

1993 ◽  
Vol 22 (1) ◽  
pp. 16-22 ◽  
Author(s):  
P. Hautojärvi ◽  
J. Mäkinen ◽  
S. Palko ◽  
K. Saarinen ◽  
C. Corbel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Point Defects ◽  
Molecular Beam

GaAs/AlGaAs Quantum Wells Grown by Low-Temperature Molecular Beam Epitaxy with Atomic Hydrogen Irradiation

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 759-762 ◽  
Author(s):  
Yoshitaka Okada ◽  
Shigeru Ohta ◽  
Tomoya Fujita ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Atomic Hydrogen ◽  
Molecular Beam

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

1993 ◽  
Vol 48 (8) ◽  
pp. 5345-5353 ◽  
Author(s):  
P. Asoka-Kumar ◽  
H.-J. Gossmann ◽  
F. C. Unterwald ◽  
L. C. Feldman ◽  
T. C. Leung ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Point Defects ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality

Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy

2003 ◽  
Vol 6 (5-6) ◽  
pp. 425-427 ◽  
Author(s):  
K. Ogawa ◽  
H. Ofuchi ◽  
H. Maki ◽  
T. Sonoyama ◽  
D. Inoue ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Local Structures

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Sign in / Sign up

Export Citation Format

Share Document