Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material
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ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.
1992 ◽
Vol 10
(3)
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pp. 1074
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1996 ◽
Vol 35
(Part 1, No. 3)
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pp. 1630-1636
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1991 ◽
pp. 669-674
2013 ◽
Vol 25
(6)
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pp. 1523-1526