GaAs/AlGaAs Quantum Wells Grown by Low-Temperature Molecular Beam Epitaxy with Atomic Hydrogen Irradiation

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 759-762 ◽  
Author(s):  
Yoshitaka Okada ◽  
Shigeru Ohta ◽  
Tomoya Fujita ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Atomic Hydrogen ◽  
Molecular Beam

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum

Reduction of Point Defects and Formation of Abrupt Hetero-Interfaces in Low-Temperature Molecular Beam Epitaxy of GaAs and GaP under Atomic Hydrogen Irradiation

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4726-4731 ◽  
Author(s):  
Mikihiro Yokozeki ◽  
Hiroo Yonezu ◽  
Takuto Tsuji ◽  
Kazuya Aizawa ◽  
Naoki Ohshima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Point Defects ◽  
Atomic Hydrogen ◽  
Molecular Beam

Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by molecular beam epitaxy

1994 ◽  
Vol 64 (12) ◽  
pp. 1546-1548 ◽  
Author(s):  
T. M. Cheng ◽  
Albert Chin ◽  
C. Y. Chang ◽  
M. F. Huang ◽  
K. Y. Hsieh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam

Resonant photorefractive AlGaAs/GaAs multiple quantum wells grown by molecular beam epitaxy at low temperature

1996 ◽  
Vol 79 (9) ◽  
pp. 7404-7406 ◽  
Author(s):  
W. Feng ◽  
Z. G. Zhang ◽  
Y. Yu ◽  
Q. Huang ◽  
P. M. Fu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy

1993 ◽  
Vol 8 (12) ◽  
pp. 3122-3125 ◽  
Author(s):  
S.F. Yoon ◽  
H.M. Li ◽  
K. Radhakrishnan ◽  
D.H. Zhang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Growth Interruption ◽  
Interface Fluctuations ◽  
Low Temperature Photoluminescence

Low-temperature photoluminescence measurements have been taken to monitor the changes in the properties of strained GaAs/InGaAs/GaAs quantum wells grown by molecular beam epitaxy at different substrate (well) temperatures with and without a 90 s-growth-interruption at the heterointerfaces. Sharp exciton peaks with average linewidths as low as 1.7 meV were observed in all the spectra. The spectra from the samples grown employing interrupts were narrower than those without interrupts, indicating structurally improved interfaces. Further linewidth narrowing was also seen in samples employing an additional interrupt of the same duration at the bottom InGaAs/GaAs interface, or by increasing the interrupt time at the top GaAs/InGaAs interface to 180 s. A consistent reduction in the linewidth was also observed in wells grown at higher temperatures. This is most likely due to greater indium re-evaporation leading to a reduction in strain, well width, and interface fluctuations.

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