Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

1998 ◽  
Vol 37 (Part 2, No. 3B) ◽  
pp. L316-L318 ◽  
Author(s):  
Motoaki Iwaya ◽  
Tetsuya Takeuchi ◽  
Shigeo Yamaguchi ◽  
Christian Wetzel ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Etch Pit Density ◽  
Etch Pit

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

2017 ◽  
Vol 110 (23) ◽  
pp. 232102 ◽  
Author(s):  
D. D. Koleske ◽  
J. J. Figiel ◽  
D. L. Alliman ◽  
B. P. Gunning ◽  
J. M. Kempisty ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Etch Pit Density ◽  
Etch Pit

Low-temperature photoluminescence study on Er-doped GaP grown by organometallic vapor phase epitaxy

1998 ◽  
Vol 83 (9) ◽  
pp. 4902-4908 ◽  
Author(s):  
Yasufumi Fujiwara ◽  
Anthony P. Curtis ◽  
Gregory E. Stillman ◽  
Naoteru Matsubara ◽  
Yoshikazu Takeda
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Photoluminescence Study ◽  
Er Doped ◽  
Low Temperature Photoluminescence

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

1995 ◽  
Vol 67 (3) ◽  
pp. 401-403 ◽  
Author(s):  
T. Warren Weeks ◽  
Michael D. Bremser ◽  
K. Shawn Ailey ◽  
Eric Carlson ◽  
William G. Perry ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Aln Buffer

scholarly journals Low-Temperature Growth of GaAs by Organometallic Vapor Phase Epitaxy Using TEGa and TBAs

2007 ◽  
Vol 56 (9) ◽  
pp. 880-885
Author(s):  
Keiji HIDAKA ◽  
Takashi HIRAMATSU ◽  
Yoshikazu TERAI ◽  
Osamu ERYU ◽  
Yasufumi FUJIWARA
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth

Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

2015 ◽  
Vol 60 (6) ◽  
pp. 889-894
Author(s):  
I. A. Belogorohov ◽  
A. A. Donskov ◽  
S. N. Knyazev ◽  
Yu. P. Kozlova ◽  
V. F. Pavlov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Epitaxial Layers
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