Epitaxial growth of AlN on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy: Influence of the gas phase N/Al ratio and low temperature protective layer

2013 ◽  
Vol 237 ◽  
pp. 118-125 ◽  
Author(s):  
R. Boichot ◽  
N. Coudurier ◽  
F. Mercier ◽  
S. Lay ◽  
A. Crisci ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Vapor Phase ◽  
Protective Layer ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

2014 ◽  
Vol 573 ◽  
pp. 140-147 ◽  
Author(s):  
A. Claudel ◽  
V. Fellmann ◽  
I. Gélard ◽  
N. Coudurier ◽  
D. Sauvage ◽  
...  
Keyword(s):  
High Temperature ◽  
Gas Phase ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

scholarly journals High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

2018 ◽  
Vol 112 (4) ◽  
pp. 042101 ◽  
Author(s):  
Kevin L. Schulte ◽  
Anna Braun ◽  
John Simon ◽  
Aaron J. Ptak
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

High-speed epitaxial growth of AlN above by hydride vapor phase epitaxy

2007 ◽  
Vol 300 (1) ◽  
pp. 42-44 ◽  
Author(s):  
Toru Nagashima ◽  
Manabu Harada ◽  
Hiroyuki Yanagi ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Low temperature buffer growth to improve hydride vapor phase epitaxy of GaN

1999 ◽  
Vol 59 (1-3) ◽  
pp. 12-15 ◽  
Author(s):  
Jeong-wook Lee ◽  
Ho-sun Paek ◽  
Ji-Beom Yoo ◽  
Gyeung-ho Kim ◽  
Dong-Wha Kum
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy

2003 ◽  
Vol 764 ◽  
Author(s):  
Hai-Ping Liu ◽  
In-Gann Chen ◽  
Jenq-Dar Tsay ◽  
Wen-Yueh Liu ◽  
Yih-Der Guo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Growth Mechanism ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
High Index ◽  
Hydride Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gan Crystal

AbstractThe low temperature growth of GaN crystal using epitaxy lateral overgrowth (ELO) on SiO2 dot pattern below 900°C by hydride vapor phase epitaxy (HVPE) have been studied. It is observed that the growth rate of GaN hexagonal pyramidal crystals along [1101] direction increases as growth temperature decreases. At low temperature of ∼ 850°C, hexagonal GaN columnar crystals with high index facet at the top can be observed. It is proposed that the surface diffusion length of precursors, such as NH3 and GaCl, decreases at lower temperature that reduces the probability of desorption and increase the lifetime. The condensation of Ga liquid droplets on the GaN surface will change the relative stability of {1101} facet. Therefore, the formation of high index planes such as {2122} facet on the top of hexagonal column along with the formation of stacking fault on the (0001) plane can be observed. A detailed study of the effect of growth temperature on the crystal growth mechanism will be presented.

Improvement of AlN crystalline quality with high epitaxial growth rates by hydride vapor phase epitaxy

2007 ◽  
Vol 305 (2) ◽  
pp. 355-359 ◽  
Author(s):  
Toru Nagashima ◽  
Manabu Harada ◽  
Hiroyuki Yanagi ◽  
Hiroyuki Fukuyama ◽  
Yoshinao Kumagai ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Growth Rates ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystalline Quality
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