GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

Monocrystalline GaN(0001) thin films have been grown at 950 °C on high-temperature, ≈ 100 nm thick, monocrystalline AlN(0001) buffer layers predeposited at 1100 °C on α(6H)−SiC(0001)Si substrates via OMVPE in a cold-wall, vertical, pancake-style reactor. These films were free of low-angle grain boundaries and the associated oriented domain microstructure. The PL spectra of the GaN films deposited on both vicinal and on-axis substrates revealed strong bound excitonic emission with a FWHM value of 4 meV. The near band-edge emission from films on the vicinal substrates was shifted slightly to a lower energy, indicative of films containing residual tensile stresses. A peak attributed to free excitonic emission was also clearly observed in the on-axis spectrum. Undoped films were too resistive for accurate Hall-effect measurements. Controlled n-type, Si-doping in GaN was achieved for net carrier concentrations ranging from approximately 1 × 1017 cm−3 to 1 × 1020 cm−3. Mg-doped, p-type GaN was achieved with nA−nD ≈ 3 × 1017 cm−3, ρ ≈ 7 Ω · cm, and μ ≈ 3 cm2/V · s. Double-crystal x-ray rocking curve measurements for simultaneously deposited 1.4 μm GaN films revealed FWHM values of 58 and 151 arcsec for deposition on on-axis and off-axis 6H−SiC(0001)Si substrates, respectively. The corresponding FWHM values for the AlN buffer layers were approximately 200 and 400 arcsec, respectively.

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Investigation of the structural defects in GaN thin films grown by organometallic vapor phase epitaxy

Metals and Materials International ◽

10.1007/bf03027234 ◽

2003 ◽

Vol 9 (1) ◽

pp. 77-82 ◽

Cited By ~ 3

Author(s):

J. -H. Choi ◽

S. -J. Lim ◽

M. -S. Cho ◽

N. -H. Cho ◽

S. -J. Chung ◽

...

Keyword(s):

Thin Films ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Structural Defects ◽

Organometallic Vapor Phase Epitaxy

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Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l1208 ◽

1998 ◽

Vol 37 (Part 2, No. 10B) ◽

pp. L1208-L1210 ◽

Cited By ~ 29

Author(s):

Yasuyuki Kobayashi ◽

Tetsuya Akasaka ◽

Naoki Kobayashi

Keyword(s):

Thermal Stability ◽

Low Temperature ◽

Ultraviolet Light ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Buffer Layers ◽

Aln Buffer ◽

Thermal Stability Of

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Effects of multiple buffer layers on structural electronic properties of GaN growth by atmospheric pressure Organometallic Vapor Phase Epitaxy

Materials Science and Engineering B ◽

10.1016/s0921-5107(99)00318-9 ◽

1999 ◽

Vol 68 (1) ◽

pp. 22-25 ◽

Cited By ~ 1

Author(s):

Chien-Cheng Yang ◽

Meng-Chyi Wu ◽

Chin-An Chang ◽

Gou-Chung Chi

Keyword(s):

Electronic Properties ◽

Vapor Phase ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Buffer Layers ◽

Organometallic Vapor Phase Epitaxy

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Эпитаксия слоев GaN(0001) или GaN(1011) на подложке Si(100)

Письма в журнал технической физики ◽

10.21883/pjtf.2019.11.47813.17756 ◽

2019 ◽

Vol 45 (11) ◽

pp. 3

Author(s):

В.Н. Бессолов ◽

М.Е. Компан ◽

Е.В. Коненкова ◽

В.Н. Пантелеев ◽

С.Н. Родин ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Hydride Vapor Phase Epitaxy ◽

Buffer Layers ◽

X Ray Diffraction ◽

Organic Vapor ◽

Metal Organic ◽

Aln Buffer ◽

Semipolar Gan ◽

Nanostructured Si

AbstractTwo different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 $$\bar {1}$$ 1) on a V -shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(10 $$\bar {1}$$ 1) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ω_θ ~ 45 arcmin, whereas for the semipolar GaN(10 $$\bar {1}$$ 1), these values are –0.29 GPa and ω_θ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.

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