Analysis of Carrier Traps in Si3N4in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1441 ◽

1999 ◽

Vol 38 (Part 1, No. 3A) ◽

pp. 1441-1447 ◽

Author(s):

Hiroshi Aozasa ◽

Ichiro Fujiwara ◽

Akihiro Nakamura ◽

Yasutoshi Komatsu

Keyword(s):

Metal Oxide ◽

Nonvolatile Memory ◽

Carrier Traps ◽

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Improvement of Hf-based metal/oxide/nitride/oxide/Si nonvolatile memory characteristics by Si surface atomically flattening

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ab70ad ◽

2020 ◽

Vol 59 (SG) ◽

pp. SGGB10

Author(s):

Shun-Ichiro Ohmi ◽

Yusuke Horiuchi ◽

Sohya Kudoh

Keyword(s):

Metal Oxide ◽

Nonvolatile Memory ◽

Nitride Oxide ◽

Memory Characteristics

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Performance Improvements of Metal–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with ZrO2Charge-Trapping Layer by Using Nitrogen Incorporation

Applied Physics Express ◽

10.7567/apex.6.084202 ◽

2013 ◽

Vol 6 (8) ◽

pp. 084202 ◽

Author(s):

Jian-Xiong Chen ◽

Jing-Ping Xu ◽

Lu Liu ◽

Pui-To Lai

Keyword(s):

Metal Oxide ◽

Nonvolatile Memory ◽

Performance Improvements ◽

Nitrogen Incorporation ◽

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HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abe09f ◽

2021 ◽

Vol 60 (SB) ◽

pp. SBBB03

Author(s):

S. Ohmi ◽

Y. Horiuchi ◽

H. Morita ◽

A. Ihara ◽

J.Y. Pyo

Keyword(s):

Metal Oxide ◽

Nonvolatile Memory ◽

Charge Trapping ◽

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Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO2 and HfON tunneling layer

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ac340c ◽

2021 ◽

Author(s):

Jooyoung Pyo ◽

Akio Ihara ◽

Wendi Zhang ◽

Shuma Nishino ◽

Shun-ichiro OHMI

Keyword(s):

Metal Oxide ◽

Nonvolatile Memory ◽

Multi Level ◽

Nitride Oxide ◽

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In situ formation of Hf-based metal/oxide/nitride/oxide/silicon structure for nonvolatile memory application

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.114201 ◽

2018 ◽

Vol 57 (11) ◽

pp. 114201 ◽

Author(s):

Sohya Kudoh ◽

Shun-ichiro Ohmi

Keyword(s):

Metal Oxide ◽

Nonvolatile Memory ◽

Silicon Structure ◽

In Situ Formation ◽

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Threshold Voltage Control for MONOS Nonvolatile Memory with High-k HfN/HfO2 Stacked Layers for Analog Memory Application

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1016.1065 ◽

2021 ◽

Vol 1016 ◽

pp. 1065-1070

Author(s):

Shun Ichiro Ohmi ◽

Jooyoung Pyo

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Nonvolatile Memory ◽

Voltage Control ◽

Analog Memory ◽

High K ◽

Multi Level ◽

In this paper, we have investigated the threshold voltage (VTH) control of metal-oxide-nitride-oxide-Si (MONOS) nonvolatile memory (NVM) with high-k HfN/HfO2 stacked layers for analog memory application. The Si surface atomically flattening was found to significantly improve the VTH controllability of the MONOS NVM with high-k HfN/HfO2 stacked layers. The multi-level-cell (MLC) operation by controlling the program voltage at the source and drain was demonstrated utilizing MONOS NVM with high-k HfN/HfO2 stacked layers.

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Gadolinium-based metal oxide for nonvolatile memory applications

Microelectronics Reliability ◽

10.1016/j.microrel.2011.09.032 ◽

2012 ◽

Vol 52 (4) ◽

pp. 635-641 ◽

Author(s):

Jer-Chyi Wang ◽

Chih-Ting Lin ◽

Pai-Chi Chou ◽

Chao-Sung Lai

Keyword(s):

Metal Oxide ◽

Nonvolatile Memory ◽

Memory Applications

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Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer

Journal of Applied Physics ◽

10.1063/1.1609650 ◽

2003 ◽

Vol 94 (8) ◽

pp. 5408 ◽

Author(s):

Sangmoo Choi ◽

Myungjun Cho ◽

Hyunsang Hwang ◽

Jung Woo Kim

Keyword(s):

Metal Oxide ◽

Blocking Layer ◽

High K ◽

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Modeling of Nonvolatile Memory Operation of Polysilicon–Oxide–Nitride–Oxide–Semiconductor and Analysis of Program Characteristics Dependent on the Trap Distribution in the Silicon–Nitride Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.5186 ◽

2004 ◽

Vol 43 (8A) ◽

pp. 5186-5198 ◽

Author(s):

Syunji Imanaga ◽

Hiroshi Aozasa

Keyword(s):

Silicon Nitride ◽

Nonvolatile Memory ◽

Nitride Layer ◽

Oxide Semiconductor ◽

Silicon Nitride Layer ◽

Program Characteristics ◽

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Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLaxTiyOzcharge trapping layers

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4978048 ◽

2017 ◽

Vol 35 (2) ◽

pp. 022203 ◽

Author(s):

Jin-Tsong Jeng ◽

Yan-Lin Li ◽

Chin-Lung Cheng

Keyword(s):

Metal Oxide ◽

Nonvolatile Memory ◽

Metal Oxide Semiconductor ◽

Physical Characteristics ◽

Oxide Semiconductor

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