Threshold Voltage Control for MONOS Nonvolatile Memory with High-k HfN/HfO2 Stacked Layers for Analog Memory Application

2021 ◽  
Vol 1016 ◽  
pp. 1065-1070
Author(s):  
Shun Ichiro Ohmi ◽  
Jooyoung Pyo
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Nonvolatile Memory ◽  
Voltage Control ◽  
Analog Memory ◽  
High K ◽  
Multi Level ◽  
Nitride Oxide

In this paper, we have investigated the threshold voltage (VTH) control of metal-oxide-nitride-oxide-Si (MONOS) nonvolatile memory (NVM) with high-k HfN/HfO2 stacked layers for analog memory application. The Si surface atomically flattening was found to significantly improve the VTH controllability of the MONOS NVM with high-k HfN/HfO2 stacked layers. The multi-level-cell (MLC) operation by controlling the program voltage at the source and drain was demonstrated utilizing MONOS NVM with high-k HfN/HfO2 stacked layers.

Analysis of Carrier Traps in Si3N4in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1441-1447 ◽  
Author(s):  
Hiroshi Aozasa ◽  
Ichiro Fujiwara ◽  
Akihiro Nakamura ◽  
Yasutoshi Komatsu
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Carrier Traps ◽  
Nitride Oxide

Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer

2003 ◽  
Vol 94 (8) ◽  
pp. 5408 ◽  
Author(s):  
Sangmoo Choi ◽  
Myungjun Cho ◽  
Hyunsang Hwang ◽  
Jung Woo Kim
Keyword(s):  
Metal Oxide ◽  
Blocking Layer ◽  
High K ◽  
Nitride Oxide

Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

2015 ◽  
Vol 108 ◽  
pp. 24-29 ◽  
Author(s):  
E. Dentoni Litta ◽  
P.-E. Hellström ◽  
M. Östling
Keyword(s):  
Threshold Voltage ◽  
Voltage Control ◽  
Metal Gate ◽  
High K

Lanthanum implantation for threshold voltage control in metal/high-k devices

2009 ◽  
Vol 86 (7-9) ◽  
pp. 1782-1785 ◽  
Author(s):  
A. Fet ◽  
V. Häublein ◽  
A.J. Bauer ◽  
H. Ryssel ◽  
L. Frey
Keyword(s):  
Threshold Voltage ◽  
Voltage Control ◽  
High K

The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)

2009 ◽  
Vol 86 (7-9) ◽  
pp. 1722-1727 ◽  
Author(s):  
Hsing-Huang Tseng ◽  
Paul Kirsch ◽  
C.S. Park ◽  
Gennadi Bersuker ◽  
Prashant Majhi ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Voltage Control ◽  
Advanced Technologies ◽  
High K
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