Transmission Electron Microscopy and Atomic Force Microscopy Studies of an Al–Pd–Mn Thin Film Prepared by a Combined Technique of Vacuum Deposition and Thermal Annealing

2001 ◽  
Vol 40 (Part 1, No. 6A) ◽  
pp. 4136-4140 ◽  
Author(s):  
Kaichi Saito ◽  
Masakazu Yoneshima ◽  
Shigeo Sugawara ◽  
Yasushi Kamimura ◽  
Keiichi Edagawa
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Thermal Annealing ◽  
Vacuum Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Combined Technique

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Sign in / Sign up

Export Citation Format

Share Document