A study of ultra-thin film ion beam deposited (IBD) hydrogenated amorphous carbon (a-C:H) using atomic force microscopy (AFM) and transmission electron microscopy (TEM)

1998 ◽  
Vol 7 (7) ◽  
pp. 1054-1058 ◽  
Author(s):  
R.W. Lamberton ◽  
J.F. Zhao ◽  
D. Magill ◽  
J.A. McLaughlin ◽  
P.D. Maguire
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Amorphous Carbon ◽  
Ion Beam ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Hydrogenated Amorphous

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Sign in / Sign up

Export Citation Format

Share Document