Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 447-451 ◽  
Author(s):  
Ilgweon Kim ◽  
Sangyeon Han ◽  
Kwangseok Han ◽  
Jongho Lee ◽  
Hyungcheol Shin
VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 219-223 ◽  
Author(s):  
Christoph Wasshuber ◽  
Hans Kosina ◽  
Siegfried Selberherr

One of the most promising applications of single-electronics is a single-electron memory chip. Such a chip would have orders of magnitude lower power consumption compared to state-of-the-art dynamic memories, and would allow integration densities beyond the tera bit chip.We studied various single-electron memory designs. Additionally we are proposing a new memory cell which we call the T-memory cell. This cell can be manufactured with state-of-the-art lithography, it operates at room temperature and shows a strong resistance against random background charge.


2005 ◽  
Vol 87 (18) ◽  
pp. 182106 ◽  
Author(s):  
C. Pace ◽  
F. Crupi ◽  
S. Lombardo ◽  
C. Gerardi ◽  
G. Cocorullo

2003 ◽  
Vol 47 (10) ◽  
pp. 1645-1649 ◽  
Author(s):  
G. Molas ◽  
B. De Salvo ◽  
D. Mariolle ◽  
G. Ghibaudo ◽  
A. Toffoli ◽  
...  

2006 ◽  
Vol 27 (3) ◽  
pp. 182-184 ◽  
Author(s):  
Wei Lee ◽  
Pin Su ◽  
Hou-Yu Chen ◽  
Chang-Yun Chang ◽  
Ke-Wei Su ◽  
...  

Author(s):  
Wei Lee ◽  
Pin Su ◽  
Hou-yu Chen ◽  
Chang-yun Chang ◽  
Ke-wei Su ◽  
...  

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