Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals

2001 ◽  
Vol 40 (Part 2, No. 1A/B) ◽  
pp. L16-L19 ◽  
Author(s):  
Theeradetch Detchprohm ◽  
Masahiro Yano ◽  
Shigekazu Sano ◽  
Ryo Nakamura ◽  
Shingo Mochiduki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
New Approach ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Growth Of Low-Dislocation-Density InP Single Crystals By The VCZ Method

1989 ◽  
Author(s):  
M. Tatsumi ◽  
T. Kawase ◽  
T. Araki ◽  
N. Yamabayashi ◽  
T. Iwasaki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
Low Dislocation Density

Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

2006 ◽  
Vol 89 (25) ◽  
pp. 251109 ◽  
Author(s):  
Te-Chung Wang ◽  
Tien-Chang Lu ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
Min Yu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Heteroepitaxy and Characterization of Low-Dislocation-Density GaN on Periodically Grooved Substrates

2000 ◽  
Vol 639 ◽  
Author(s):  
T. Detchprohm ◽  
M. Yano ◽  
R. Nakamura ◽  
S. Sano ◽  
S. Mochiduki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
New Method ◽  
Growth Technique ◽  
New Approach ◽  
Density Area ◽  
Low Dislocation Density ◽  
Dislocation Densities ◽  
Movpe Growth

ABSTRACTWe have developed a new method to prepare low-dislocation-density GaN by using periodically grooved substrates in a conventional MOVPE growth technique. This new approach was demonstrated for GaN grown on periodically grooved α-Al2O3(0001), 6H-SiC(0001)Si and Si(111) substrates. Dislocation densities were 2×107 cm−2 in low-dislocation-density area.

Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density

2007 ◽  
Vol 304 (1) ◽  
pp. 57-63 ◽  
Author(s):  
Daisuke Nakamura ◽  
Satoshi Yamaguchi ◽  
Itaru Gunjishima ◽  
Yoshiharu Hirose ◽  
Tsunenobu Kimoto
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
Dislocation Structure ◽  
Low Dislocation Density

Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction

2009 ◽  
Vol 311 (10) ◽  
pp. 3019-3024 ◽  
Author(s):  
Fumio Kawamura ◽  
Masaki Tanpo ◽  
Naoya Miyoshi ◽  
Mamoru Imade ◽  
Masashi Yoshimura ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
Low Dislocation Density ◽  
Dislocation Reduction

Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density

2009 ◽  
Vol 94 (25) ◽  
pp. 251912 ◽  
Author(s):  
Shih-Chun Ling ◽  
Chu-Li Chao ◽  
Jun-Rong Chen ◽  
Po-Chun Liu ◽  
Tsung-Shine Ko ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique

2000 ◽  
Vol 639 ◽  
Author(s):  
H. Miyake ◽  
H. Mizutani ◽  
K. Hiramatsu ◽  
Y. Iyechika ◽  
Y. Honda ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Window Region

ABSTRACTGaN layers with low dislocation density have been fabricated be means of facet-controlled epitaxial lateral overgrowth (FACELO) via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The distribution of the dislocations in FACELO GaN was inspected by observation of InGaN growth pits. For FACELO with {11-20} facets as the first step, the dislocations concentrate only in the window region. For FACELO with {11-22} facets as the first step, the dislocations exist only in the coalescence region. The double FACELO, which was FACELO with {11-20} on FACELO with {11-22}, was demonstrated and dislocation density of less than 105 cm−2 was achieved.

scholarly journals Low dislocation density, high power InGaN laser diodes

2004 ◽  
Vol 9 ◽  
Author(s):  
Piotr Perlin ◽  
M. Leszczyñski ◽  
P. Prystawko ◽  
P. Wisniewski ◽  
R. Czernetzki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
High Power ◽  
Laser Diodes ◽  
Epitaxial Lateral Overgrowth ◽  
Homogeneous Distribution ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Bulk Gan ◽  
New Generation ◽  
Better Than

We used single crystals of GaN, obtained from high-pressure synthesis, as substrates for Metalorganics Vapor Phase Epitaxy growth of violet and UV laser diodes. The use of high-quality bulk GaN leads to the decrease of the dislocation density to the low level of 105 cm−2, i.e. two orders of magnitude better than typical for the Epitaxial Lateral Overgrowth laser structures fabricated on sapphire. The low density and homogeneous distribution of defects in our structures enables the realization of broad stripe laser diodes. We demonstrate that our laser diodes, having 15 μm wide stripes, are able to emit 1.3-1.9 W per facet (50% reflectivity) in 30 ns long pulses. This result, which is among the best ever reported for nitride lasers, opens the path for the development of a new generation of high power laser diodes.

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