scholarly journals Low dislocation density, high power InGaN laser diodes

2004 ◽  
Vol 9 ◽  
Author(s):  
Piotr Perlin ◽  
M. Leszczyñski ◽  
P. Prystawko ◽  
P. Wisniewski ◽  
R. Czernetzki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
High Power ◽  
Laser Diodes ◽  
Epitaxial Lateral Overgrowth ◽  
Homogeneous Distribution ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Bulk Gan ◽  
New Generation ◽  
Better Than

We used single crystals of GaN, obtained from high-pressure synthesis, as substrates for Metalorganics Vapor Phase Epitaxy growth of violet and UV laser diodes. The use of high-quality bulk GaN leads to the decrease of the dislocation density to the low level of 105 cm−2, i.e. two orders of magnitude better than typical for the Epitaxial Lateral Overgrowth laser structures fabricated on sapphire. The low density and homogeneous distribution of defects in our structures enables the realization of broad stripe laser diodes. We demonstrate that our laser diodes, having 15 μm wide stripes, are able to emit 1.3-1.9 W per facet (50% reflectivity) in 30 ns long pulses. This result, which is among the best ever reported for nitride lasers, opens the path for the development of a new generation of high power laser diodes.

400-nm Band AlGaInN-Based High Power Laser Diodes

2001 ◽  
Vol 693 ◽  
Author(s):  
Takeharu Asano ◽  
Motonobu Takeya ◽  
Tsuyoshi Tojyo ◽  
Shinro Ikeda ◽  
Takashi Mizuno ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Active Layer ◽  
High Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Epitaxial Lateral Overgrowth ◽  
Direct Result ◽  
Electron Blocking Layer ◽  
Low Dislocation Density ◽  
Operating Current

AbstractHigh-power AlGaInN-based laser diodes (LDs) operating with high reliability in the 400-nm band have been successfully fabricated using a high-productivity process. Epitaxial lateral overgrowth (ELO) over a 10-m m region was employed to obtain a broad growth area with low dislocation density, and the thickness of the ELO-GaN layer was limited to approximately 5 m in order to minimize wafer bending. These techniques allow for the easy and reproducible alignment of the laser stripe on the region of low dislocation density. The insertion of a GaInN interlayer between the active layer and the AlGaN electron blocking layer was effective for reducing the strain between these two layers, resulting in homogeneous luminescence from the active layer and lower operating current. A mean time to failure of 15000 h under 30-mW continuous-wave operation at 60°C was realized as a direct result of the lower operating current. Productivity was remarkably improved by performing epitaxial growth on a 3-inch substrate. Highly uniform laser wafers were successfully fabricated by achieving minimal temperature variation (1000 ±7°C) over the 3-inch substrate. The resultant laser structures varied in thickness by only ±5%, and the photoluminescence wavelength was consistent within ±2.5 nm over the entire 3-inch substrate. The average threshold current of 550 LDs selected from a fourth wafer was 32.7 mA, with small standard deviation of 3.2 mA.

Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

2006 ◽  
Vol 89 (25) ◽  
pp. 251109 ◽  
Author(s):  
Te-Chung Wang ◽  
Tien-Chang Lu ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
Min Yu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density

2009 ◽  
Vol 94 (25) ◽  
pp. 251912 ◽  
Author(s):  
Shih-Chun Ling ◽  
Chu-Li Chao ◽  
Jun-Rong Chen ◽  
Po-Chun Liu ◽  
Tsung-Shine Ko ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique

2000 ◽  
Vol 639 ◽  
Author(s):  
H. Miyake ◽  
H. Mizutani ◽  
K. Hiramatsu ◽  
Y. Iyechika ◽  
Y. Honda ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Window Region

ABSTRACTGaN layers with low dislocation density have been fabricated be means of facet-controlled epitaxial lateral overgrowth (FACELO) via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The distribution of the dislocations in FACELO GaN was inspected by observation of InGaN growth pits. For FACELO with {11-20} facets as the first step, the dislocations concentrate only in the window region. For FACELO with {11-22} facets as the first step, the dislocations exist only in the coalescence region. The double FACELO, which was FACELO with {11-20} on FACELO with {11-22}, was demonstrated and dislocation density of less than 105 cm−2 was achieved.

Detailed Characterisations of GaAs Films on Si Obtained by Conformal Growth.

1992 ◽  
Vol 280 ◽  
Author(s):  
B. Gerard ◽  
D. Pribat ◽  
R. Bisaro ◽  
E. Costard ◽  
J. Nagle ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Dislocation Density ◽  
The Self ◽  
Epitaxial Lateral Overgrowth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lateral Overgrowth ◽  
State Of Stress ◽  
Low Dislocation Density ◽  
Gaas Films

ABSTRACTConformal growth is a confined epitaxial lateral overgrowth technique capable of yielding low dislocation density GaAs films on Si. This technique makes extensive use of selective epitaxy and crystal growth is confined by a dielectric cap as well as by the self-passivated Si surface itself.In this paper, we have performed a detailed characterisation of the state of stress of the GaAs films in various configurations (after conformal growth and removal of the seed regions, and after the regrowth of an MBE layer) by photoluminescence measurements at 5K and X-ray diffraction experiments. Although the as-grown conformal films are found in the same state of stress than reference MOCVD GaAs epilayers on Si, we report a significant decrease of this stress after MBE regrowth on conformal films.

High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

2000 ◽  
Vol 39 (Part 2, No. 7A) ◽  
pp. L647-L650 ◽  
Author(s):  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Masayuki Senoh ◽  
Toshio Matsushita ◽  
Yasunobu Sugimoto ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Low Dislocation Density ◽  
Long Lifetime ◽  
Multi Quantum Well

Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates

2006 ◽  
Author(s):  
L. Marona ◽  
P. Wisniewski ◽  
P. Prystawko ◽  
S. Porowski ◽  
T. Suski ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Laser Diodes ◽  
Low Dislocation Density ◽  
Bulk Gan

scholarly journals Fabrication of Low Dislocation Density, Single-Crystalline Diamond via Two-Step Epitaxial Lateral Overgrowth

Crystals ◽  
2017 ◽  
Vol 7 (4) ◽  
pp. 114 ◽  
Author(s):  
Fengnan Li ◽  
Jingwen Zhang ◽  
Xiaoliang Wang ◽  
Minghui Zhang ◽  
and Hongxing Wang
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Single Crystalline ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Load dislocation density broad area high power CW operated InGaN laser diodes

2006 ◽  
Author(s):  
P. Perlin ◽  
P. Wisniewski ◽  
R. Czernecki ◽  
P. Prystawko ◽  
M. Leszczynski ◽  
...  
Keyword(s):  
Dislocation Density ◽  
High Power ◽  
Laser Diodes ◽  
Broad Area

LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method

2008 ◽  
Vol 600-603 ◽  
pp. 1245-1250 ◽  
Author(s):  
Fumio Kawamura ◽  
Hidekazu Umeda ◽  
Masanori Morishita ◽  
Ryohei Gejo ◽  
Masaki Tanpo ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Secondary Ion Mass Spectrometry ◽  
Impurity Content ◽  
Single Crystal Substrate ◽  
Flux Method ◽  
Low Dislocation Density ◽  
Bulk Gan ◽  
New Apparatus ◽  
Metal Flux ◽  
Gan Crystal

We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the Na flux method. Our success is due to the development of a new apparatus for growing large GaN single crystals. The crystal grown in this study has a low dislocation density of 2.3×105 (cm-2), The secondary ion mass spectrometry (SIMS) technique demonstrates that the Na element is difficult to be taken in the crystal in both the + and – c directions, resulting in a Na concentration of 4.2 × 1014 (cm-3) in the crystal. Our success in growing a two-inch GaN substrate with a low impurity content and low dislocation density should pave the way for the Na flux method to become a practical application.

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