Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

Shin-ichi Takagi; Mariko Takayanagi

doi:10.1143/jjap.41.2348

Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2348 ◽

2002 ◽

Vol 41 (Part 1, No. 4B) ◽

pp. 2348-2352 ◽

Cited By ~ 62

Author(s):

Shin-ichi Takagi ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Tunneling Current ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling Current

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Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126789 ◽

2000 ◽

Vol 76 (25) ◽

pp. 3810-3812 ◽

Cited By ~ 62

Author(s):

Hisao Kawaura ◽

Toshitsugu Sakamoto ◽

Toshio Baba

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

Direct Tunneling ◽

Direct Tunneling Current

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Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect transistors under mechanical stress

Applied Physics Letters ◽

10.1063/1.2245373 ◽

2006 ◽

Vol 89 (7) ◽

pp. 073509 ◽

Cited By ~ 31

Author(s):

Ji-Song Lim ◽

Xiaodong Yang ◽

Toshikazu Nishida ◽

Scott E. Thompson

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Deformation Potential ◽

Direct Tunneling Current ◽

Band Deformation

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Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1527710 ◽

2003 ◽

Vol 93 (2) ◽

pp. 1064-1068 ◽

Cited By ~ 13

Author(s):

Kingsuk Maitra ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

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Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

Applied Physics Express ◽

10.7567/1882-0786/ab1b53 ◽

2019 ◽

Vol 12 (6) ◽

pp. 061003 ◽

Cited By ~ 1

Author(s):

Kidist Moges ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ultrahigh Temperature

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

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AlGaN/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Al2O3 Gate-Oxide and Step-Graded AlGaN Channel

ECS Meeting Abstracts ◽

10.1149/ma2021-01331086mtgabs ◽

2021 ◽

Vol MA2021-01 (33) ◽

pp. 1086-1086

Author(s):

Ching-Sung Lee ◽

Yun-Jung Lin ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Inversion Layer Electron Transport in 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Silicon Carbide ◽

10.1002/9783527629077.ch11 ◽

2011 ◽

pp. 267-290

Author(s):

Vinayak Tilak

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3484043 ◽

2010 ◽

Vol 108 (5) ◽

pp. 054509 ◽

Cited By ~ 75

Author(s):

S. Dhar ◽

S. Haney ◽

L. Cheng ◽

S.-R. Ryu ◽

A. K. Agarwal ◽

...

Keyword(s):

Metal Oxide ◽

Carrier Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2840187 ◽

2008 ◽

Vol 92 (5) ◽

pp. 052102 ◽

Cited By ~ 64

Author(s):

K. H. Cho ◽

K. H. Yeo ◽

Y. Y. Yeoh ◽

S. D. Suk ◽

M. Li ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc21 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC21 ◽

Cited By ~ 2

Author(s):

Yukio Nakabayashi ◽

Takamitsu Ishihara ◽

Toshinori Numata ◽

Ken Uchida ◽

Shinichi Takagi

Keyword(s):

Metal Oxide ◽

Experimental Evaluation ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Normal Mass

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