AlGaN/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Al2O3 Gate-Oxide and Step-Graded AlGaN Channel
2011 ◽
Vol 62
(1)
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pp. 152-155
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2007 ◽
Vol 22
(8)
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pp. 947-951
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2020 ◽
Vol 8
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pp. 9-14
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2005 ◽
Vol 2
(7)
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pp. 2651-2654
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2001 ◽
Vol 188
(1)
◽
pp. 219-222
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2016 ◽
Vol 5
(12)
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pp. Q284-Q288
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