Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2840187 ◽

2008 ◽

Vol 92 (5) ◽

pp. 052102 ◽

Author(s):

K. H. Cho ◽

K. H. Yeo ◽

Y. Y. Yeoh ◽

S. D. Suk ◽

M. Li ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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A Reliable Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) Based on Radio-Frequency Analysis

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.9884 ◽

2014 ◽

Vol 14 (11) ◽

pp. 8219-8224

Author(s):

Jae Hwa Seo ◽

Young Jun Yoon ◽

Hwan Gi Lee ◽

Gwan Min Yoo ◽

Eou-Sik Cho ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Frequency Analysis ◽

Extraction Method ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2348 ◽

2002 ◽

Vol 41 (Part 1, No. 4B) ◽

pp. 2348-2352 ◽

Author(s):

Shin-ichi Takagi ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling Current

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Fabrication of Highly Scaled Silicon Nanowire Gate-All-Around Metal–Oxide–Semiconductor Field Effect Transistors by Using Self-Aligned Local-Channel V-gate by Optical Lithography Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.084203 ◽

2010 ◽

Vol 49 (8) ◽

pp. 084203 ◽

Author(s):

Jae Hyun Park ◽

Jae Young Song ◽

Jong Pil Kim ◽

Sang Wan Kim ◽

Jang-Gn Yun ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Optical Lithography ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lithography Process

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Device and Circuit Codesign Strategy for Application to Low-Noise Amplifier Based on Silicon Nanowire Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dn03 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DN03 ◽

Author(s):

Seongjae Cho ◽

Hee-Sauk Jhon ◽

Jung Hoon Lee ◽

Se Hwan Park ◽

Hyungcheol Shin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Low Noise ◽

Metal Oxide Semiconductor ◽

Low Noise Amplifier ◽

Oxide Semiconductor ◽

Noise Amplifier

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Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.010110 ◽

2011 ◽

Vol 50 ◽

pp. 010110 ◽

Author(s):

Shinichi Takagi ◽

Mitsuru Takenaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

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Monolithic Integration of a Silicon Nanowire Field-Effect Transistors Array on a Complementary Metal-Oxide Semiconductor Chip for Biochemical Sensor Applications

Analytical Chemistry ◽

10.1021/acs.analchem.5b02604 ◽

2015 ◽

Vol 87 (19) ◽

pp. 9982-9990 ◽

Author(s):

Paolo Livi ◽

Moria Kwiat ◽

Amir Shadmani ◽

Alexander Pevzner ◽

Giulio Navarra ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Monolithic Integration ◽

Oxide Semiconductor ◽

Sensor Applications ◽

Semiconductor Chip

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Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4933287 ◽

2015 ◽

Vol 118 (15) ◽

pp. 155105 ◽

Author(s):

Yeonghun Lee ◽

Kuniyuki Kakushima ◽

Kenji Natori ◽

Hiroshi Iwai

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Physical Review Applied ◽

10.1103/physrevapplied.13.044066 ◽

2020 ◽

Vol 13 (4) ◽

Author(s):

Wenhan Zhou ◽

Shengli Zhang ◽

Shiying Guo ◽

Yangyang Wang ◽

Jing Lu ◽

...

Keyword(s):

Metal Oxide ◽

Effective Mass ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional

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Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors in the Ballistic Transport Limit

Applied Physics Express ◽

10.7567/apex.6.034301 ◽

2013 ◽

Vol 6 (3) ◽

pp. 034301 ◽

Author(s):

Kenta Shimoida ◽

Hideaki Tsuchiya ◽

Yoshinari Kamakura ◽

Nobuya Mori ◽

Matsuto Ogawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis

Journal of Applied Physics ◽

10.1063/1.3592252 ◽

2011 ◽

Vol 109 (11) ◽

pp. 113712 ◽

Author(s):

Yeonghun Lee ◽

Kuniyuki Kakushima ◽

Kenji Natori ◽

Hiroshi Iwai

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mobility Analysis ◽

Limited Mobility ◽

Spatially Resolved ◽

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