Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

2019 ◽  
Vol 12 (6) ◽  
pp. 061003 ◽  
Author(s):  
Kidist Moges ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Heiji Watanabe
Keyword(s):  
Metal Oxide ◽  
Performance Improvement ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Ultrahigh Temperature

AlGaN/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Al2O3 Gate-Oxide and Step-Graded AlGaN Channel

2021 ◽  
Vol MA2021-01 (33) ◽  
pp. 1086-1086
Author(s):  
Ching-Sung Lee ◽  
Yun-Jung Lin ◽  
Wei-Chou Hsu ◽  
Yi-Ping Huang ◽  
Cheng-Yang You ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Heterostructure ◽  
Heterostructure Field Effect Transistors

Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors

2008 ◽  
Vol 47 (1) ◽  
pp. 99-103 ◽  
Author(s):  
Yoshifumi Nishi ◽  
Atsuhiro Kinoshita ◽  
Daisuke Hagishima ◽  
Junji Koga
Keyword(s):  
Experimental Study ◽  
Metal Oxide ◽  
Performance Improvement ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N2O Nitrided Gate Oxide and N2O Polysilicon Gate Reoxidation

1998 ◽  
Vol 37 (Part 1, No. 10) ◽  
pp. 5507-5509
Author(s):  
Chao Sung Lai ◽  
Tien Sheng Chao ◽  
Tan Fu Lei ◽  
Chung Len Lee ◽  
Tiao Yuan Huang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Polysilicon Gate

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)

2008 ◽  
Vol 600-603 ◽  
pp. 791-794 ◽  
Author(s):  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Dielectric Breakdown ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability

The channel mobility and oxide reliability of metal-oxide-semiconductor field-effect transistors (MOSFETs) on 4H-SiC (0001) carbon face were investigated. The gate oxide was fabricated by using dry-oxidized film followed by pyrogenic reoxidation annealing (ROA). Significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. Furthermore, the field-effect inversion channel mobility (μFE) of MOSFETs fabricated by using pyrogenic ROA was as high as that of conventional 4H-SiC (0001) MOSFETs having the pyrogenic-oxidized gate oxide. It is suggested that the pyrogenic ROA of dry oxide as a method of gate oxide fabrication satisfies both channel mobility and oxide reliability on 4H-SiC (0001) carbon-face MOSFETs.

High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

2011 ◽  
Vol 109 (2) ◽  
pp. 023702 ◽  
Author(s):  
B. R. Tuttle ◽  
S. Dhar ◽  
S.-H. Ryu ◽  
X. Zhu ◽  
J. R. Williams ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
Sodium Ions ◽  
High Electron Mobility

A Unified Functional Reliability Model for N-channel Metal–Oxide–Semiconductor Field-Effect Transistors with Sub 2 nm Gate Oxide

2002 ◽  
Vol 41 (Part 1, No. 9) ◽  
pp. 5546-5550
Author(s):  
Hai-Ming Lee ◽  
Long-Jye Du ◽  
Mong-Song Liang ◽  
Ya-Ching King ◽  
Charles Ching-Hsiang Hsu
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Reliability Model ◽  
Functional Reliability
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