The Atomic-Scale Removal Mechanism during Si Tip Scratching on Si and SiO2Surfaces in Aqueous KOH with an Atomic Force Microscope

2002 ◽  
Vol 41 (Part 1, No. 7B) ◽  
pp. 4919-4923 ◽  
Author(s):  
Futoshi Katsuki ◽  
Akihiko Saguchi ◽  
Wataru Takahashi ◽  
Junji Watanabe
2004 ◽  
Vol 841 ◽  
Author(s):  
Futoshi Katsuki ◽  
Junji Watanabe

ABSTRACTThe pressure dependence of the microwear of an oxidized Si surface under aqueous electrolyte solutions has been investigated using an atomic force microscope with a single crystal Si tip. The removal ratio of Si tip to SiO2 surface is found to be highly sensitive to the contact pressure. We present a microscopic removal mechanism which is determined by an interplay of the diffusion of H2O in Si and SiO2.


2006 ◽  
Vol 17 (23) ◽  
pp. 5866-5874 ◽  
Author(s):  
T Trevethan ◽  
M Watkins ◽  
L N Kantorovich ◽  
A L Shluger ◽  
J Polesel-Maris ◽  
...  

2016 ◽  
Vol 9 (4) ◽  
pp. 046601 ◽  
Author(s):  
Makoto Nogami ◽  
Akira Sasahara ◽  
Toyoko Arai ◽  
Masahiko Tomitori

1995 ◽  
Vol 3 (4) ◽  
pp. 6-7
Author(s):  
Stephen W. Carmichael

For biologic studies, atomic force microscopy (AFM) has been prevailing over scanning tunneling microscopy (STM) because it has the capability of imaging non-conducting biologic specimens. However, STM generally gives better resolution than AFM, and we're talking about resolution on the atomic scale. In a recent article, Franz Giessibl (Atomic resolution of the silicon (111)- (7X7) surface by atomic force microscopy, Science 267:68-71, 1995) has demonstrated that atoms can be imaged by AFM.


2007 ◽  
Vol 18 (34) ◽  
pp. 345503 ◽  
Author(s):  
T Trevethan ◽  
M Watkins ◽  
A L Shluger ◽  
J Polesel-Maris ◽  
S Gauthier ◽  
...  

Author(s):  
H. Yamashita ◽  
Y. Hata

Abstract It is becoming more important to observe structures and failed sites in LSIs. An atomic force microscope (AFM) can obtain atomic scale topographic images on sample surfaces. To analyze failures in LSIs, several treatments for the AFM observation, such as wet etching and mechanical polishing for a crosssectional imaging, have been proposed so far. A good correlation of AFM images using FIB anisotropic etch with those acquired by conventional technique such as SIM and TEM has been demonstrated A crystallographic information about Al thin film is obtained by AFM using this technique.


1994 ◽  
Vol 2 (3) ◽  
pp. 205-215 ◽  
Author(s):  
M.L. Occelli ◽  
S.A.C. Gould ◽  
B. Drake

1995 ◽  
Vol 331-333 ◽  
pp. 395-401 ◽  
Author(s):  
G.J. Pietsch ◽  
Y.J. Chabal ◽  
G.S. Higashi

MRS Bulletin ◽  
1993 ◽  
Vol 18 (5) ◽  
pp. 20-25 ◽  
Author(s):  
Miquel B. Salmeron

Advances in our understanding of the phenomena of adhesion, friction, and lubrication are facilitated by the recent development of new tools that allow the study of contacts in close-to-ideal conditions. These new tools are the surface force spparatus (SFA) and the atomic force microscope (AFM). The first was developed by Israelachvili in the 1970s. In this device, contact between two atomically flat surfaces of mica occurs over an area of several micrometers in diameter after the mica sheets, glued onto two perpendicular cylindrical lenses, are compressed. Force, area of contact, and separation distance can be controlled at the atomic scale. The second device, the AFM, was developed by Binnig et al. in 1986. The sharp tip of the AFM is a convenient idealization of a single asperity. In addition, the AFM can be used to image the surface in the weak repulsive or in the attractive modes so that minimum perturbation is introduced by the imaging process itself. These two devices have the necessary sensitivity to allow the application of forces weak enough not to dislodge atoms from their sites during contact. The order of magnitude of the force that can lead to the rupture of chemical bonds is a convenient figure to keep in mind in this context. A simple estimate of this force is obtained by considering a bond-length increase of 1 Å as leading to dissociation. For a bond energy of ≈1 eV, Fb ≈ 1 eV/1 Å ≈ 1 × 10−9 N.


2011 ◽  
Vol 2011.64 (0) ◽  
pp. 417-418
Author(s):  
Akiho TANAKA ◽  
Keiichi KIMURA ◽  
Keisuke SUZUKI ◽  
Panart KHAJORNRUNGRUANG ◽  
Suguru TAKAHASHI

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