Single-Electron Multiple-Valued Memory Using Ultra-Small Floating Gate Metal-Oxide-Semiconductor Field Effect Transistor

Floating Gate ◽

Single Electron ◽

Oxide Semiconductor ◽

Fabrication and Characterization of CdF2/CaF2 Resonant Tunneling Floating Gate Metal-oxide-semiconductor Field Effect Transistor Structures

10.7567/ssdm.2008.h-9-3 ◽

2008 ◽

Author(s):

M. Watanabe ◽

T. Wada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistor ◽

Floating Gate ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Fabrication And Characterization

Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.3028649 ◽

2008 ◽

Vol 93 (22) ◽

pp. 222103 ◽

Cited By ~ 16

Author(s):

Satoru Miyamoto ◽

Katsuhiko Nishiguchi ◽

Yukinori Ono ◽

Kohei M. Itoh ◽

Akira Fujiwara

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Single Electron ◽

Oxide Semiconductor ◽

Escape Dynamics ◽

Foundry Metal–Oxide–Semiconductor Field-Effect-Transistor Electrometer for Single-Electron Detection

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.4855 ◽

2005 ◽

Vol 44 (7A) ◽

pp. 4855-4858 ◽

Cited By ~ 5

Author(s):

Nicolas Clement ◽

Hiroshi Inokawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Single Electron ◽

Oxide Semiconductor ◽

Electron Detection ◽

Design considerations and electro-mechanical simulation of an inertial sensor based on a floating gate metal-oxide semiconductor field-effect transistor as transducer

Microsystem Technologies ◽

10.1007/s00542-014-2274-9 ◽

2014 ◽

Vol 21 (6) ◽

pp. 1353-1362 ◽

Cited By ~ 2

Author(s):

G. S. Abarca Jiménez ◽

M. A. Reyes Barranca ◽

S. Mendoza Acevedo ◽

J. E. Munguía Cervantes ◽

M. A. Alemán Arce

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Inertial Sensor ◽

Floating Gate ◽

Oxide Semiconductor ◽

Mechanical Simulation ◽

Design Considerations ◽

Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.2168496 ◽

2006 ◽

Vol 88 (5) ◽

pp. 053121 ◽

Cited By ~ 96

Author(s):

Akira Fujiwara ◽

Hiroshi Inokawa ◽

Kenji Yamazaki ◽

Hideo Namatsu ◽

Yasuo Takahashi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Electron Tunneling ◽

Silicon Nanowire ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Tunneling ◽

Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.2837544 ◽

2008 ◽

Vol 92 (4) ◽

pp. 042102 ◽

Cited By ~ 145

Author(s):

Akira Fujiwara ◽

Katsuhiko Nishiguchi ◽

Yukinori Ono

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Charge Pump ◽

Single Electron ◽

Oxide Semiconductor ◽

Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Oxide Semiconductor ◽

A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽

Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Oxide Semiconductor ◽

Short Channel ◽

High responsivity in integrated optically controlled metal-oxide semiconductor field-effect transistor using directly bonded SiO2-InP

IEEE Photonics Technology Letters ◽

10.1109/68.605530 ◽

1997 ◽

Vol 9 (8) ◽

pp. 1143-1145 ◽

Cited By ~ 10

Author(s):

T. Yamagata ◽

K. Shimomura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

High Responsivity ◽