Nanoimprint Lithography Using Novolak-Type Photoresist and Soft Mold at Room Temperature

2004 ◽  
Vol 43 (No. 6B) ◽  
pp. L794-L796 ◽  
Author(s):  
Takahiro Numai ◽  
Takeshi Koide ◽  
Takashi Minemoto ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa
2004 ◽  
Author(s):  
Takahiro Numai ◽  
Takeshi Koide ◽  
Takashi Minemoto ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa

2012 ◽  
Vol 1511 ◽  
Author(s):  
Ippei Ishikawa ◽  
Keisuke Sakurai ◽  
Shuji Kiyohara ◽  
Taisuke Okuno ◽  
Hideto Tanoue ◽  
...  

ABSTRACTThe microfabrication technologiesfor organic light-emitting devices (OLEDs) are essential to the fabrication of the next generation of light-emitting devices. The micro-OLEDs fabricated by room-temperature curing nanoimprint lithography (RTC-NIL) using diamond molds have been investigated. However, light emissions from 10 μm-square-dot OLEDs fabricated by the RTC-NIL method have not been uniform. Therefore, we proposed the fabrication of micro-OLEDs by room-temperature curing nanocontact-print lithography (RTC-NCL) using the diamond-like carbon (DLC) mold. The DLC molds used in RTC-NCL were fabricated by an electron cyclotron resonance (ECR) oxygen ion shower with polysiloxane oxide mask in electron beam (EB) lithography technology. The mold patterns are square and rectangle dots which has 10 µm-width, 10 µm-width and50 µm-length, respectively. The height of the patterns is 500 nm. The DLC molds were used to form the insulating layer of polysiloxane in RTC-NCL. We carried out the RTC-NCL process using the DLC mold under the following optimum conditions: 0.1 MPa-pressure for coating DLC mold with polysiloxane film, 2.1 MPa-pressure for transferring polysiloxane from DLC mold pattern to indium tin oxide (ITO) glass substrate. We deposited N, N'-Diphenyl -N, N'-di (m-tolyl)benzidine (TPD) [40 nm-thickness] as hole transport layer / Tris(8-quinolinolato)aluminum (Alq3) [40 nm-thickness] as electron transport layer / Al [200 nm-thickness] as cathode on ITO glass substrateas anode in this order. We succeeded in formation of the insulating layer with square and rectangle dots which has 10 µm-width,10 µm-width and 50 µm-length, and operation of micro-OLEDs by RTC-NIL using DLC molds.


2005 ◽  
Vol 78-79 ◽  
pp. 665-669 ◽  
Author(s):  
Jiarui Tao ◽  
Yifang Chen ◽  
Xingzhong Zhao ◽  
Adnan Malik ◽  
Zheng Cui

2007 ◽  
Vol 6 (6) ◽  
pp. 639-644 ◽  
Author(s):  
S. Harrer ◽  
J.K.W. Yang ◽  
G.A. Salvatore ◽  
K.K. Berggren ◽  
F. Ilievski ◽  
...  

2003 ◽  
Vol 83 (11) ◽  
pp. 2268-2270 ◽  
Author(s):  
Wei Wu ◽  
Jian Gu ◽  
Haixiong Ge ◽  
Christopher Keimel ◽  
Stephen Y. Chou

2012 ◽  
Vol 1395 ◽  
Author(s):  
Ippei Ishikawa ◽  
Taisuke Okuno ◽  
Shuji Kiyohara ◽  
Yoshio Taguchi ◽  
Yoshinari Sugiyama ◽  
...  

ABSTRACTOrganic light-emitting devices (OLEDs) have attracted a lot of attention as a next generation display. In this study, we fabricated the micro-OLEDs by room-temperature curing nanoimprint lithography (RTC-NIL) using diamond molds. The diamond has superior durability and was used as mold material for RTC-NIL. The diamond molds have been fabricated by electron cyclotron resonance (ECR) oxygen ion shower with polysiloxane oxide mask in the electron beam (EB) lithography technology. We fabricated the diamond mold pattern with 10 μm-square dot. The diamond molds have been used to form an insulating layer in micro-OLEDs. The optimum thickness of N,N’-Diphenyl-N,N’-di(m-tolyl)benzidine (TPD) [hole transport layer],Tris(8-quinolinolato)aluminum (Alq3) [electron transport layer] and aluminum (Al) [cathode] were 40 nm, 40 nm and 200 nm, respectively. We succeeded in formation of insulating layer in micro-OLEDs and operation of micro-OLEDs with 10 μm-square-dot by RTC-NIL using diamond molds.


2006 ◽  
Vol 961 ◽  
Author(s):  
Ken-Ichiro Matsui ◽  
Shinji Matsui

ABSTRACTRoom-temperature nanoimprint lithography (RT-NIL) using spin-coated hydrogen silsesquioxane (HSQ) resin as the replication material was developed. HSQ pattern with 50 nm linewidth was successfully obtained by the RT-NIL. Postbaking temperature dependence of a HSQ imprinted depth on a mold linewidth was investigated. HSQ imprinted depth had a dependence on the mold linewidth. This revealed that the RT-NIL is suitable for the linewidths of below 1 mm. Furthermore, we have also developed a new imprinting technique that uses liquid-phase hydrogen silsesquioxane (HSQ) as an alternative to the spin-coated HSQ resin. The liquid-phase HSQ imprint technique enabled fabrication of various HSQ patterns with a wide range of linewidths from 25 nm to 300 mm. Arbitrary patterns, including both submicron and greater than 100 micron patterns, were simultaneously replicated with a one-step imprint process, something very difficult to accomplish with spin-coated HSQ. Moreover, after imprinting, the residual HSQ layer in the compressed area was less than 10 nm thick.


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