Effects of Fabrication Process on Current–Voltage Characteristics of Carbon Nanotube Field Effect Transistors

2005 ◽  
Vol 44 (4A) ◽  
pp. 1599-1602 ◽  
Author(s):  
Takashi Mizutani ◽  
Shinya Iwatsuki ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication Process ◽  
Current Voltage ◽  
Current Voltage Characteristics

Self-consistent simulation of multi-walled CNT nanotransistors

2010 ◽  
Vol 2 (5) ◽  
pp. 453-456 ◽  
Author(s):  
Davide Mencarelli ◽  
Luca Pierantoni ◽  
Andrea D. Donato ◽  
Tullio Rozzi
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
The Self ◽  
Simulation Tool ◽  
Numerical Convergence ◽  
Current Voltage ◽  
Self Consistent ◽  
Current Voltage Characteristics

We present detailed results of the self-consistent analysis of carbon nanotube (CNT) field-effect transistors (FET), previously extended by us to the case of multi-walled/multi-band coherent carrier transport. The contribution to charge transport, due to different walls and sub-bands of a multi-walled CNT, is shown to be generally non-negligible. In order to prove the effectiveness of our simulation tool, we provide interesting examples about current–voltage characteristics of four-walled semi-conducting nanotubes, including details of numerical convergence and contribution of sub-bands to the calculation.

A compact current-voltage model for carbon nanotube field effect transistors

2008 ◽  
Author(s):  
Hadi Hosseinzadegan ◽  
Hossein Aghababa ◽  
Mahmoud Zangeneh ◽  
Ali Afzali-kusha ◽  
Behjat Forouzandeh
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Current Voltage

ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2010 ◽  
Vol 05 (03) ◽  
pp. 161-165 ◽  
Author(s):  
A. BENFDILA ◽  
S. ABBAS ◽  
R. IZQUIERDO ◽  
R. TALMAT ◽  
A. VASEASHTA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Drain Current ◽  
Functional Behavior ◽  
Current Saturation ◽  
Current Voltage ◽  
Saturation Region ◽  
Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

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