Influence of Pressure and Plasma Potential on High Growth Rate Microcrystalline Silicon Grown by Very High Frequency Plasma Enhanced Chemical Vapour Deposition

2006 ◽  
Vol 45 (8A) ◽  
pp. 6166-6172 ◽  
Author(s):  
A. Gordijn ◽  
M. Vanecek ◽  
W. J. Goedheer ◽  
J. K. Rath ◽  
R. E. I. Schropp
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
High Growth ◽  
Plasma Potential ◽  
High Growth Rate ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

scholarly journals Catalytic Carbon Submicron Fabrication Using Home-Built Very-High Frequency Plasma Enhanced Chemical Vapour Deposition

2008 ◽  
Vol 40 (2) ◽  
pp. 166-181
Author(s):  
Sukirno ◽  
Satria Zulkarnaen Bisri ◽  
Rasih Yulia Sari ◽  
Lilik Hasanah ◽  
Mursal ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
High Frequency ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

Microstructure and Electric Transport Characteristic of Microcrystalline Silicon Films Fabricated by Very High Frequency Plasma Enhanced Chemical Vapor Deposition

2010 ◽  
Vol 663-665 ◽  
pp. 600-603
Author(s):  
Xiang Wang ◽  
Rui Huang ◽  
Jie Song ◽  
Yan Qing Guo ◽  
Chao Song ◽  
...  
Keyword(s):  
High Frequency ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Hydrogen Flow ◽  
Transmission Electron ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

Microcrystalline silicon (μc-Si:H) film deposited on silicon oxide in a very high frequency plasma enhanced chemical vapor deposition with highly H2 dilution of SiH4 has been investigated by Raman spectroscopy and high resolution transmission electron microscopy. Raman spectroscopy results show that the crystalline volume fraction increases with increasing the hydrogen flow rate and for the hydrogen flow rate of 160 sccm, the crystalline volume fraction reaches to 67.5%. Nearly parallel columnar structures with complex microstructure are found from cross-sectional transmission electron microscopy images of the film. The temperature depend dark conductivity and activation energy are studied in order to investigate the electronic transport processes in the nc-Si films.

Relation between Electronic Properties and Density of Crystalline Agglomerates in Microcrystalline Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Paula C.P. Bronsveld ◽  
Arjan Verkerk ◽  
Tomas Mates ◽  
Antonin Fejfar ◽  
Jatindra K. Rath ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Chemical Vapour ◽  
Very High Frequency ◽  
Silicon Thin Films ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Different Types ◽  
Substrate Temperatures ◽  
Intergrain Boundaries ◽  
Very High

AbstractA series of silicon thin films was made by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at substrate temperatures below 100 °C at different hydrogen to silane dilution ratios. The electronic properties of these layers were studied as a function of the surface crystalline fraction as determined accurately from a combination of microscope images at different length scales (gathered by using different types of microscopes). The results show that the electrical conductivity increases monotonously as a function of crystalline surface coverage and no discontinuity is observed at the percolation threshold. An increase in conductivity of four orders of magnitude for layers with a high crystalline content is observed after annealing at temperatures up to 170 °C. Combined with the information that oxygen is incorporated at Si-H surface bond sites, this suggests that doping of the intergrain boundaries by oxygen might be dominantly responsible for the electronic properties of mixed phase silicon.

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