Optical emission spectroscopy investigation on very high frequency plasma and its glow discharge mechanism during the microcrystalline silicon deposition

2005 ◽  
Vol 472 (1-2) ◽  
pp. 125-129 ◽  
Author(s):  
Huidong Yang ◽  
Chunya Wu ◽  
Junkai Huang ◽  
Ruiqin Ding ◽  
Ying Zhao ◽  
...  
2010 ◽  
Vol 663-665 ◽  
pp. 600-603
Author(s):  
Xiang Wang ◽  
Rui Huang ◽  
Jie Song ◽  
Yan Qing Guo ◽  
Chao Song ◽  
...  

Microcrystalline silicon (μc-Si:H) film deposited on silicon oxide in a very high frequency plasma enhanced chemical vapor deposition with highly H2 dilution of SiH4 has been investigated by Raman spectroscopy and high resolution transmission electron microscopy. Raman spectroscopy results show that the crystalline volume fraction increases with increasing the hydrogen flow rate and for the hydrogen flow rate of 160 sccm, the crystalline volume fraction reaches to 67.5%. Nearly parallel columnar structures with complex microstructure are found from cross-sectional transmission electron microscopy images of the film. The temperature depend dark conductivity and activation energy are studied in order to investigate the electronic transport processes in the nc-Si films.


1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4335-4339 ◽  
Author(s):  
Shigeru Kakuta ◽  
Takeshi Kitajima ◽  
Yutaka Okabe ◽  
Toshiaki Makabe

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