Hot-Carrier Degradation and Electric Field and Electron Concentration near Drain Junction in Low-Temperature N-Channel Single Drain and Lightly Doped Drain Polycrystalline Silicon Thin Film Transistors

2007 ◽  
Vol 46 (3B) ◽  
pp. 1322-1327 ◽  
Author(s):  
Gen Usami ◽  
Yukisato Nogami ◽  
Toshihisa Yajima ◽  
Masahiro Yamagata ◽  
Toshifumi Satoh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Electric Field ◽  
Electron Concentration ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Hot Carrier ◽  
Lightly Doped Drain ◽  
Hot Carrier Degradation

Grain-Boundary Related Hot Carrier Degradation Mechanism in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 1999-2003 ◽  
Author(s):  
Toshiyuki Yoshida ◽  
Yoshiki Ebiko ◽  
Michiko Takei ◽  
Nobuo Sasaki ◽  
Toshiaki Tsuchiya
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Degradation Mechanism ◽  
Silicon Thin Film ◽  
Hot Carrier ◽  
Hot Carrier Degradation
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