Hydrogen Modulation-Doped Structures to Improve Crystalline Fraction of Polycrystalline Silicon Films Prepared by Excimer Laser Annealing at Low Energy Densities

2007 ◽  
Vol 46 (12) ◽  
pp. 7858-7860 ◽  
Author(s):  
Akira Heya ◽  
Naoto Matsuo ◽  
Tadashi Serikawa ◽  
Naoya Kawamoto
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Low Energy ◽  
Silicon Films ◽  
Crystalline Fraction ◽  
Excimer Laser Annealing ◽  
Polycrystalline Silicon Films

Polycrystalline Silicon Films on SiO2 Substrate Treated by Excimer Laser Annealing

2013 ◽  
Vol 750-752 ◽  
pp. 946-951
Author(s):  
Chun Yan Duan ◽  
Bin Ai ◽  
Rong Xue Li ◽  
Chao Liu ◽  
Jian Jun Lai ◽  
...  
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Laser Energy ◽  
Chemical Vapor ◽  
Excimer Laser Annealing ◽  
Before And After ◽  
Si Films ◽  
Polycrystalline Silicon Films

Selected area laser-annealed polycrystalline silicon (p-Si) thin films were prepared by a 248 nm excimer laser. 1 μm thick p-Si films with grain size less than 100 nm were deposited on SiO2substrate by chemical vapor deposition using atmospheric pressure (APCVD). Grain sizes before and after annealing was examined by scanning electron microscopy (SEM) and the mechanism of grain growth was discussed in detail. The maximum grain size of a selected area laser-annealed p-Si film can be increased from 100 nm up to 2.9 μm on SiO2substrate by using appropriate laser energy densities. It indicated that silicon grains in laser-annealed regions had grown up competitively with three stages.

Raman Studies of Heavily Doped Polycrystalline Si Films Prepared by Excimer-Laser-Annealing of Doped a-Si:H

1992 ◽  
Vol 283 ◽  
Author(s):  
M. E. Savage ◽  
U. JaYamaha ◽  
A. Compaan ◽  
A. Aydinli ◽  
Dashen Shen
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Films ◽  
Excimer Laser Annealing ◽  
Boron Doped ◽  
Electronic Raman Scattering ◽  
High Carrier ◽  
Heavily Doped ◽  
Si Films ◽  
Polycrystalline Silicon Films

ABSTRACTExtremely heavily doped polycrystalline silicon films were prepared by multiple-pulse XeCl excimer laser annealing of hydrogenated amorphous silicon films. The as-grown films used here included five types: intrinsic, boron-doped, phosphorous-doped, and carbon alloyed with and without boron doping. Raman studies reveal that the annealed films prepared from the boron or phosphorous doped a-Si:H have high carrier activation and display the interference lineshape (Breit-Wigner-Fano) of the discrete phonons (Si-Si and Si-B modes) interacting with the continuum of the single particle electronic Raman scattering. The Raman lineshapes indicate concentrations of ∼1 × 1021 cm3. This is confirmed by dark conductivities exceeding 100 S/cm in the annealed boron-doped and phosphorous-doped layers.

Microstructure of polycrystalline silicon films obtained by combined furnace and laser annealing

1995 ◽  
Vol 66 (11) ◽  
pp. 1394-1396 ◽  
Author(s):  
R. Carluccio ◽  
J. Stoemenos ◽  
G. Fortunato ◽  
D. B. Meakin ◽  
M. Bianconi
Keyword(s):  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

2006 ◽  
Vol 45 (4A) ◽  
pp. 2726-2730 ◽  
Author(s):  
Naoya Kawamoto ◽  
Atsushi Masuda ◽  
Naoto Matsuo ◽  
Yasuhiro Seri ◽  
Toshimasa Nishimori ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing

2002 ◽  
Vol 46 (8) ◽  
pp. 1085-1090 ◽  
Author(s):  
Chang-Ho Tseng ◽  
Ching-Wei Lin ◽  
Teh-Hung Teng ◽  
Ting-Kuo Chang ◽  
Huang-Chung Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Silicon Thin Films ◽  
Krf Excimer Laser
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