Effect of Hydrogen on Secondary Grain Growth of Polycrystalline Silicon Films by Excimer Laser Annealing in Low-Temperature Process

2006 ◽  
Vol 45 (9A) ◽  
pp. 6908-6910 ◽  
Author(s):  
Akira Heya ◽  
Naoto Matsuo ◽  
Hideki Matsumura ◽  
Naoya Kawamoto
Keyword(s):  
Low Temperature ◽  
Grain Growth ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Silicon Films ◽  
Excimer Laser Annealing ◽  
Polycrystalline Silicon Films ◽  
Low Temperature Process

Polycrystalline Silicon Films on SiO2 Substrate Treated by Excimer Laser Annealing

2013 ◽  
Vol 750-752 ◽  
pp. 946-951
Author(s):  
Chun Yan Duan ◽  
Bin Ai ◽  
Rong Xue Li ◽  
Chao Liu ◽  
Jian Jun Lai ◽  
...  
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Laser Energy ◽  
Chemical Vapor ◽  
Excimer Laser Annealing ◽  
Before And After ◽  
Si Films ◽  
Polycrystalline Silicon Films

Selected area laser-annealed polycrystalline silicon (p-Si) thin films were prepared by a 248 nm excimer laser. 1 μm thick p-Si films with grain size less than 100 nm were deposited on SiO2substrate by chemical vapor deposition using atmospheric pressure (APCVD). Grain sizes before and after annealing was examined by scanning electron microscopy (SEM) and the mechanism of grain growth was discussed in detail. The maximum grain size of a selected area laser-annealed p-Si film can be increased from 100 nm up to 2.9 μm on SiO2substrate by using appropriate laser energy densities. It indicated that silicon grains in laser-annealed regions had grown up competitively with three stages.

Low-Temperature Poly-Si TFT by Excimer Laser Annealing

2001 ◽  
Vol 685 ◽  
Author(s):  
Tohru Nishibe
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Present State ◽  
Glass Substrate ◽  
Laser Annealing ◽  
Value Added ◽  
Gate Insulator ◽  
Excimer Laser Annealing ◽  
Low Temperature Process

AbstractPoly-Si TFT-LCD has begun its way to an advanced display by integrating the driver circuits onto the glass substrate. Improvement of poly-Si TFT is essential in order to achieve value-added display where circuits for various functions are integrated on one substrate. This report the concept of poly-Si TFT display from present state to future scope, and required technologies for each generation. It will also focus on technologies such as crystallization and gate insulator formation at low temperature process.

Raman Studies of Heavily Doped Polycrystalline Si Films Prepared by Excimer-Laser-Annealing of Doped a-Si:H

1992 ◽  
Vol 283 ◽  
Author(s):  
M. E. Savage ◽  
U. JaYamaha ◽  
A. Compaan ◽  
A. Aydinli ◽  
Dashen Shen
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Films ◽  
Excimer Laser Annealing ◽  
Boron Doped ◽  
Electronic Raman Scattering ◽  
High Carrier ◽  
Heavily Doped ◽  
Si Films ◽  
Polycrystalline Silicon Films

ABSTRACTExtremely heavily doped polycrystalline silicon films were prepared by multiple-pulse XeCl excimer laser annealing of hydrogenated amorphous silicon films. The as-grown films used here included five types: intrinsic, boron-doped, phosphorous-doped, and carbon alloyed with and without boron doping. Raman studies reveal that the annealed films prepared from the boron or phosphorous doped a-Si:H have high carrier activation and display the interference lineshape (Breit-Wigner-Fano) of the discrete phonons (Si-Si and Si-B modes) interacting with the continuum of the single particle electronic Raman scattering. The Raman lineshapes indicate concentrations of ∼1 × 1021 cm3. This is confirmed by dark conductivities exceeding 100 S/cm in the annealed boron-doped and phosphorous-doped layers.

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