Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition

Vapor Deposition ◽

Chemical Vapor ◽

Interfacial Polarization ◽

High Electron ◽

High Electron Mobility ◽

Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

10.1063/1.3122347 ◽

2009 ◽

Vol 94 (15) ◽

pp. 153506 ◽

Cited By ~ 22

Author(s):

David F. Brown ◽

Rongming Chu ◽

Stacia Keller ◽

Steven P. DenBaars ◽

Umesh K. Mishra

Keyword(s):

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron ◽

High Electron Mobility ◽

Mobility and Charge Density Tuning in Double-Doped Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistors Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.5909 ◽

2005 ◽

Vol 44 (8) ◽

pp. 5909-5912 ◽

Cited By ~ 3

Author(s):

Chong-Yi Lee ◽

Hung-Pin Shiao ◽

Kuan-Chu Kuo ◽

Hsin-Yen Wu ◽

Wen-Hsiang Lin

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon

Applied Physics Express ◽

10.1143/apex.2.111005 ◽

2009 ◽

Vol 2 (11) ◽

pp. 111005 ◽

Cited By ~ 30

Author(s):

S. Lawrence Selvaraj ◽

Takaaki Suzue ◽

Takashi Egawa

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

High Electron ◽

High Electron Mobility ◽

Deep Pits ◽

High-quality InAlN/GaN high electron mobility transistors on Si (111) by metalorganic chemical vapor deposition

2006 IEEE Compound Semiconductor Integrated Circuit Symposium ◽

10.1109/csics.2006.319948 ◽

2006 ◽

Author(s):

Noriyuki Watanabe ◽

Haruki Yokoyama ◽

Masanobu Hiroki ◽

Yasuhiro Oda ◽

Takashi Kobayashi ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

High Electron ◽

High Quality ◽

High Electron Mobility ◽

Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c102 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C102 ◽

Cited By ~ 3

Author(s):

Josephine Selvaraj ◽

Susai Lawrence Selvaraj ◽

Makoto Miyoshi ◽

Yoshitaka Kuraoka ◽

Mitsuhiro Tanaka ◽

...

Keyword(s):

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron ◽

High Electron Mobility ◽

High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition

AIP Advances ◽

10.1063/5.0063784 ◽

2021 ◽

Vol 11 (11) ◽

pp. 115301

Author(s):

Yang Wang ◽

Gaoqiang Deng ◽

Jie Ji ◽

Haotian Ma ◽

Shixu Yang ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

High Resistivity ◽

High Electron ◽

High Electron Mobility ◽

InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by metalorganic chemical vapor deposition

10.1063/1.113137 ◽

1995 ◽

Vol 66 (2) ◽

pp. 212-214 ◽

Cited By ~ 12

Author(s):

N. Pan ◽

J. Elliott ◽

H. Hendriks ◽

L. Aucoin ◽

P. Fay ◽

...

Keyword(s):

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Optimization of buffer layers for AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors by atmospheric pressure metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/bf02655837 ◽

1992 ◽

Vol 21 (2) ◽

pp. 199-203 ◽

Cited By ~ 2

Author(s):

N. Pan ◽

G. S. Jackson ◽

J. Carter ◽

H. Hendriks ◽

S. K. Brierley

Keyword(s):

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition

10.1063/1.4927743 ◽

2015 ◽

Vol 107 (4) ◽

pp. 043503 ◽

Cited By ~ 4

Author(s):

JunShuai Xue ◽

JinCheng Zhang ◽

Yue Hao

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

δ‐doped AlGaAs and AlGaAs/InGaAs high electron mobility transistor structures grown by metalorganic chemical vapor deposition

10.1063/1.107003 ◽

1992 ◽

Vol 60 (19) ◽

pp. 2380-2382 ◽

Cited By ~ 17

Author(s):

G. M. Yang ◽

S. G. Park ◽

K. S. Seo ◽

B. D. Choe

Keyword(s):

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽