InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.113137 ◽

1995 ◽

Vol 66 (2) ◽

pp. 212-214 ◽

Author(s):

N. Pan ◽

J. Elliott ◽

H. Hendriks ◽

L. Aucoin ◽

P. Fay ◽

...

Keyword(s):

Low Temperature ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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Optimization of buffer layers for AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors by atmospheric pressure metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/bf02655837 ◽

1992 ◽

Vol 21 (2) ◽

pp. 199-203 ◽

Author(s):

N. Pan ◽

G. S. Jackson ◽

J. Carter ◽

H. Hendriks ◽

S. K. Brierley

Keyword(s):

Vapor Deposition ◽

Atmospheric Pressure ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.3122347 ◽

2009 ◽

Vol 94 (15) ◽

pp. 153506 ◽

Author(s):

David F. Brown ◽

Rongming Chu ◽

Stacia Keller ◽

Steven P. DenBaars ◽

Umesh K. Mishra

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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Mobility and Charge Density Tuning in Double-Doped Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistors Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.5909 ◽

2005 ◽

Vol 44 (8) ◽

pp. 5909-5912 ◽

Author(s):

Chong-Yi Lee ◽

Hung-Pin Shiao ◽

Kuan-Chu Kuo ◽

Hsin-Yen Wu ◽

Wen-Hsiang Lin

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon

Applied Physics Express ◽

10.1143/apex.2.111005 ◽

2009 ◽

Vol 2 (11) ◽

pp. 111005 ◽

Author(s):

S. Lawrence Selvaraj ◽

Takaaki Suzue ◽

Takashi Egawa

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Deep Pits ◽

Metalorganic Chemical

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High-quality InAlN/GaN high electron mobility transistors on Si (111) by metalorganic chemical vapor deposition

2006 IEEE Compound Semiconductor Integrated Circuit Symposium ◽

10.1109/csics.2006.319948 ◽

2006 ◽

Author(s):

Noriyuki Watanabe ◽

Haruki Yokoyama ◽

Masanobu Hiroki ◽

Yasuhiro Oda ◽

Takashi Kobayashi ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Quality ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c102 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C102 ◽

Author(s):

Josephine Selvaraj ◽

Susai Lawrence Selvaraj ◽

Makoto Miyoshi ◽

Yoshitaka Kuraoka ◽

Mitsuhiro Tanaka ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition

AIP Advances ◽

10.1063/5.0063784 ◽

2021 ◽

Vol 11 (11) ◽

pp. 115301

Author(s):

Yang Wang ◽

Gaoqiang Deng ◽

Jie Ji ◽

Haotian Ma ◽

Shixu Yang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

High Resistivity ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.4901834 ◽

2014 ◽

Vol 116 (18) ◽

pp. 183704 ◽

Author(s):

Matthew A. Laurent ◽

Geetak Gupta ◽

Steven Wienecke ◽

Azim A. Muqtadir ◽

Stacia Keller ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Interfacial Polarization ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

physica status solidi (a) ◽

10.1002/pssa.201900760 ◽

2020 ◽

Vol 217 (7) ◽

pp. 1900760

Author(s):

Eric Frayssinet ◽

Luan Nguyen ◽

Marie Lesecq ◽

Nicolas Defrance ◽

Maxime Garcia Barros ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Vapor Phase Epitaxy ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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Chemical beam epitaxy selectively-regrown n+-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structure

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90421-9 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 261-267 ◽

Author(s):

P. Bove ◽

K. Ono ◽

K. Joshin ◽

H. Tanaka ◽

K. Kasai ◽

...

Keyword(s):

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

High Electron ◽

Chemical Beam Epitaxy ◽

Transistor Structure ◽

High Electron Mobility ◽

Metalorganic Chemical

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