High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition
2005 ◽
Vol 44
(8)
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pp. 5909-5912
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2009 ◽
Vol 48
(4)
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pp. 04C102
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1992 ◽
Vol 21
(2)
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pp. 199-203
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