scholarly journals High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition

AIP Advances ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 115301
Author(s):  
Yang Wang ◽  
Gaoqiang Deng ◽  
Jie Ji ◽  
Haotian Ma ◽  
Shixu Yang ◽  
...  
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