Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

The effects of growth parameters on the electrical properties in InAlN/AlN/GaN high-electron-mobility transistors (HEMTs)

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) ◽

10.1109/smelec.2014.6920907 ◽

2014 ◽

Author(s):

Wei-Ching Huang ◽

Yuen-Yee Wong ◽

Kuan-Shin Liu ◽

Chi-Feng Hsieh ◽

Edward Yi Chang

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Growth Parameters ◽

High Electron ◽

High Electron Mobility ◽

Electrolyte Electro-Reflectance Spectra of Crack-Free AlGaN/GaN High Electron Mobility Transistors on Si Substrate

10.7567/ssdm.2015.ps-6-6 ◽

2015 ◽

Author(s):

T.S. Ko ◽

B.Y. Hu ◽

N.W. Chang ◽

D.Y. Lin ◽

J.S. Li

Keyword(s):

Electron Mobility ◽

Reflectance Spectra ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

Applied Physics Express ◽

10.7567/apex.7.095502 ◽

2014 ◽

Vol 7 (9) ◽

pp. 095502 ◽

Cited By ~ 4

Author(s):

Yuen-Yee Wong ◽

Edward Yi Chang ◽

Wei-Ching Huang ◽

Yueh-Chin Lin ◽

Yung-Yi Tu ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Growth Mode ◽

High Electron ◽

High Electron Mobility ◽

Comparative Analysis of Nano-Scale Structural and Electrical Properties in AlGaN/GaN High Electron Mobility Transistors on SiC and Sapphire Substrates

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.7631 ◽

2013 ◽

Vol 13 (10) ◽

pp. 7083-7088 ◽

Cited By ~ 2

Author(s):

Cong Wang ◽

Sung-Jin Cho ◽

Nam-Young Kim

Keyword(s):

Comparative Analysis ◽

Electrical Properties ◽

Electron Mobility ◽

Structural And Electrical Properties

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Nano Scale ◽

Electron Mobility Transistors ◽

Observation of 8600 K electron temperature in AlGaN/GaN high electron mobility transistors on Si substrate

Semiconductor Science and Technology ◽

10.1088/0268-1242/31/3/035007 ◽

2016 ◽

Vol 31 (3) ◽

pp. 035007 ◽

Cited By ~ 2

Author(s):

Tomotaka Narita ◽

Yuichi Fujimoto ◽

Akio Wakejima ◽

Takashi Egawa

Keyword(s):

Electron Temperature ◽

Electron Mobility ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Normally–off AlGaN/GaN high electron mobility transistors on Si substrate with selective barrier regrowth in ohmic regions

Semiconductor Science and Technology ◽

10.1088/1361-6641/abecab ◽

2021 ◽

Author(s):

Weihong Jiang ◽

Haipeng Tang ◽

Jennifer Bardwell

Keyword(s):

Electron Mobility ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

The effect of growth parameters on the residual carbon concentration in GaN high electron mobility transistors: theory, modeling, and experiments

Wide Bandgap Semiconductor-Based Electronics ◽

10.1088/978-0-7503-2516-5ch10 ◽

2020 ◽

Author(s):

Indraneel Sanyal ◽

Jen-Inn Chyi

Keyword(s):

Carbon Concentration ◽

Electron Mobility ◽

Growth Parameters ◽

Residual Carbon ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Modeling And Experiments

Correlation Between Electrical Properties Degradation and Short-Channel Effects in Nano-Gate AlGaN/GaN High Electron Mobility Transistors

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2012.1410 ◽

2012 ◽

Vol 4 (9) ◽

pp. 944-947

Author(s):

Jiangfeng Du ◽

Xinchuan Zhang ◽

Zhihong Feng ◽

Shaobo Dun ◽

Ziqi Zhao ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron ◽

Short Channel Effects ◽

Short Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Channel Effects

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Electrical properties of molecular beam epitaxially grown Al[sub x]Ga[sub 1−x]Sb[sub y]As[sub 1−y] and its application in InP-based high electron mobility transistors

10.1116/1.1376382 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1529 ◽

Cited By ~ 2

Author(s):

W. Z. Cai ◽

N. T. Moshegov ◽

T. S. Mayer ◽

D. L. Miller

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures

Applied Physics Letters ◽

10.1063/1.3263955 ◽

2009 ◽

Vol 95 (20) ◽

pp. 203504 ◽

Cited By ~ 20

Author(s):

F. González-Posada Flores ◽

C. Rivera ◽

E. Muñoz

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Strain State ◽

High Electron ◽

High Electron Mobility ◽