Comparative Analysis of Nano-Scale Structural and Electrical Properties in AlGaN/GaN High Electron Mobility Transistors on SiC and Sapphire Substrates

Structural And Electrical Properties

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Nano Scale ◽

Electron Mobility Transistors ◽

Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab4b01 ◽

2019 ◽

Vol 34 (12) ◽

pp. 125006 ◽

Cited By ~ 1

Author(s):

Weizhen Yao ◽

Lianshan Wang ◽

Fangzheng Li ◽

Yulin Meng ◽

Shaoyan Yang ◽

...

Keyword(s):

Electrical Properties ◽

Film Thickness ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Structural And Electrical Properties ◽

Gan Film

Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7939 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7939-7943 ◽

Cited By ~ 15

Author(s):

Makoto Miyoshi ◽

Masahiro Sakai ◽

Subramaniam Arulkumaran ◽

Hiroyasu Ishikawa ◽

Takashi Egawa ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Metalorganic Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Al Content ◽

Sapphire Substrates ◽

Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates

10.7567/ssdm.2001.c-1-2 ◽

2001 ◽

Author(s):

S. Arulkumaran ◽

T. Egawa ◽

H. Ishikawa ◽

T. Jimbo

Keyword(s):

Silicon Carbide ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

Applied Physics Express ◽

10.7567/apex.7.095502 ◽

2014 ◽

Vol 7 (9) ◽

pp. 095502 ◽

Cited By ~ 4

Author(s):

Yuen-Yee Wong ◽

Edward Yi Chang ◽

Wei-Ching Huang ◽

Yueh-Chin Lin ◽

Yung-Yi Tu ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Growth Mode ◽

High Electron ◽

High Electron Mobility ◽

Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.111002 ◽

2009 ◽

Vol 48 (11) ◽

pp. 111002 ◽

Cited By ~ 9

Author(s):

Shuxin Tan ◽

Takaaki Suzue ◽

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Growth Parameters ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1941 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 1941-1943 ◽

Cited By ~ 7

Author(s):

Seung-Chul Lee ◽

Jin-Cherl Her ◽

Sang-Myeon Han ◽

Kwang-Seok Seo ◽

Min-Koo Han

Keyword(s):

Electron Mobility ◽

Electrostatic Discharge ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Correlation Between Electrical Properties Degradation and Short-Channel Effects in Nano-Gate AlGaN/GaN High Electron Mobility Transistors

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2012.1410 ◽

2012 ◽

Vol 4 (9) ◽

pp. 944-947

Author(s):

Jiangfeng Du ◽

Xinchuan Zhang ◽

Zhihong Feng ◽

Shaobo Dun ◽

Ziqi Zhao ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron ◽

Short Channel Effects ◽

Short Channel ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Channel Effects

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Electrical properties of molecular beam epitaxially grown Al[sub x]Ga[sub 1−x]Sb[sub y]As[sub 1−y] and its application in InP-based high electron mobility transistors

10.1116/1.1376382 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1529 ◽

Cited By ~ 2

Author(s):

W. Z. Cai ◽

N. T. Moshegov ◽

T. S. Mayer ◽

D. L. Miller

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures

Applied Physics Letters ◽

10.1063/1.3263955 ◽

2009 ◽

Vol 95 (20) ◽

pp. 203504 ◽

Cited By ~ 20

Author(s):

F. González-Posada Flores ◽

C. Rivera ◽

E. Muñoz

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Strain State ◽

High Electron ◽

High Electron Mobility ◽

Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

Radiation Effects and Defects in Solids ◽

10.1080/10420150.2015.1010170 ◽

2015 ◽

Vol 170 (5) ◽

pp. 377-385 ◽

Cited By ~ 9

Author(s):

Anupama Yadav ◽

Elena Flitsiyan ◽

Leonid Chernyak ◽

Ya-Hsi Hwang ◽

Yueh-Ling Hsieh ◽

...

Keyword(s):

Electrical Properties ◽

Gamma Irradiation ◽

Electron Mobility ◽

High Electron ◽

Moderate Dose ◽

High Electron Mobility ◽