Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation

2010 ◽  
Vol 49 (2) ◽  
pp. 021001 ◽  
Author(s):  
Jin-Yu Shiu ◽  
Chung-Yu Lu ◽  
Ting-Yi Su ◽  
Rong-Tan Huang ◽  
Herbert Zirath ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electrical Characterization ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Oxygen Ion ◽  
Transmission Electron ◽  
Oxygen Ion Implantation

Electron Microscopy Study of Localized Gate Forward Breakdown in AlGaN/AlN/GaN High Electron Mobility Transistors

2008 ◽  
Vol 14 (S2) ◽  
pp. 624-625
Author(s):  
L Li ◽  
NT Nuhfer ◽  
M Skowronski
Keyword(s):  
Electron Microscopy ◽  
New Mexico ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

scholarly journals Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

2019 ◽  
Vol 125 (3) ◽  
pp. 035702 ◽  
Author(s):  
Philippe Ferrandis ◽  
Mariam El-Khatib ◽  
Marie-Anne Jaud ◽  
Erwan Morvan ◽  
Matthew Charles ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Electrical Characterization ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Deep Traps

Oxygen Ion Implantation into Germanium

1987 ◽  
Vol 107 ◽  
Author(s):  
T.P. Sjoreen ◽  
N.M. Ravindra ◽  
M.K. El-Ghor ◽  
D. Fathy
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dense Network ◽  
Cross Sectional ◽  
Oxygen Ion ◽  
Transmission Electron ◽  
Spin Resonance ◽  
Buried Layer ◽  
Substrate Temperatures ◽  
Oxygen Ion Implantation

AbstractSingle crystal (111) and (100) Ge wafers were implanted with 16O (180 keV, 2.0 x 1018/cm2, 14–28 ¼A/cm2 ) at substrate temperatures of 250, 330, and 500°C. Implanted samples were annealed at 350, 450, 550, and 650°C for 30–90 minutes in an Ar ambient. Rutherford backscattering channeling analysis and cross-sectional transmission electron microscopy indicate that an amorphous buried layer is formed by implantation and that the overlayer contains a dense network of precipitates. Electron spin resonance measurements indicate that the layer does not contain GeO2, but rather oxygen deficient GeO2. Annealing of samples up to 550°C showed no change in the morphology, however, after annealing at 650°C the buried layer was gone and all that remained was a damaged Ge substrate with little or no oxygen. Further annealing for 60 min left nearly virgin Ge.

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