Effects of the Substrate Temperature on the Structure and Properties of Cd1-xMnxTe Films

2014 ◽  
Vol 633 ◽  
pp. 269-272 ◽  
Author(s):  
Jun Nan Wang ◽  
Lin Wang ◽  
Huan Huan Ji ◽  
Bing Ren ◽  
Yi Ming Yang ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Wide Band ◽  
High Resistivity ◽  
Temperature Dependent ◽  
Wide Band Gap ◽  
Structural And Electrical Properties ◽  
Closed Space Sublimation ◽  
Sublimation Method ◽  
Substrate Temperatures ◽  
Space Sublimation

Cd1-xMnxTe (CdMnTe) can be a good candidate for gamma and X-ray detection because of its wide band-gap, high resistivity, and good electro-transport properties. Polycrystalline CdMnTe films were grown by closed-space sublimation method on glasses at different substrate temperatures. In this paper, substrate temperature dependent surface morphology, chemical composition, structural and electrical properties of CdMnTe films are investigated systematically.

Structural and Electrical Properties of Hydrothermal Growth ZnO Nanorods

2015 ◽  
Vol 1109 ◽  
pp. 104-107
Author(s):  
K.L. Foo ◽  
U. Hashim ◽  
Chun Hong Voon ◽  
M. Kashif
Keyword(s):  
Electrical Properties ◽  
Zno Nanorods ◽  
Wide Band ◽  
Hydrothermal Growth ◽  
Oxide Semiconductor ◽  
Wide Band Gap ◽  
Interdigitated Electrode ◽  
Growth Technique ◽  
Xrd Pattern ◽  
Structural And Electrical Properties

ZnO nanorods, type of the metal-oxide semiconductor deposited on interdigitated electrode (IDE) substrate using hydrothermal growth technique. The growth ZnO nanorods was annealed in furnace at 500°C for 2 hours as to obtain highly crystallite of ZnO nanorods. XRD pattern indicated the synthesized ZnO nanorods have preferred orientation along the (002) plane. Moreover, FESEM images showed that the nanorods with the size less than 60 nanometer were successfully synthesized using hydrothermal growth technique. The investigation on optical properties using UV-Vis-NIR spectrophotometer confirmed ZnO is classified as a wide band gap semiconductor material. Furthermore, the growth ZnO nanorods which undergo electrical properties testing using dielectric analyzer and source meter show that the ZnO nanorods demonstrated rectifying behaviour.

Catalytic growth of CdTe nanowires by closed space sublimation method

2013 ◽  
Vol 546 ◽  
pp. 375-378 ◽  
Author(s):  
Gwangseok Yang ◽  
Younghun Jung ◽  
Seungju Chun ◽  
Donghwan Kim ◽  
Jihyun Kim
Keyword(s):  
Closed Space ◽  
Catalytic Growth ◽  
Closed Space Sublimation ◽  
Sublimation Method ◽  
Space Sublimation

Growth of CuGaTe2 based compounds by a closed space sublimation method

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1190-1193 ◽  
Author(s):  
Ayaka Usui ◽  
Aya Uruno ◽  
Masakazu Kobayashi
Keyword(s):  
Closed Space ◽  
Closed Space Sublimation ◽  
Sublimation Method ◽  
Space Sublimation

Gallium Incorporation Kinetics During GSMBE of GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
Charles R. Jones ◽  
Ting Lei ◽  
Ron Kaspi ◽  
Keith R. Evans
Keyword(s):  
Substrate Temperature ◽  
Formation Rate ◽  
Film Surface ◽  
Complex Surface ◽  
Rate Variation ◽  
Temperature Dependent ◽  
Gas Source ◽  
Substrate Temperatures ◽  
Kinetics Of ◽  
Ammonia Flux

ABSTRACTThe kinetics of Ga incorporation during gas-source molecular beam epitaxy of GaN are investigated for varying substrate temperature and incident ammonia flux. Incident Ga atoms eventually either: 1) react with NH3 to form GaN, 2) accumulate on the film surface, or 3) desorb. Low substrate temperatures lead to significant Ga surface accumulation due to the temperature-dependent reactivity of NH3 towards Ga. High substrate temperatures give rise to significant Ga desorption. Increasing NH3 flux retards both Ga surface accumulation and Ga desorption. The GaN formation rate variation with substrate temperature peaks near 750°C and increases with NH3 flux. The observation of two distinct and very low activation energies for Ga desorption suggests a relatively complex surface chemistry and a strong likelihood that hydrogen is playing an important role.

Effects of Substrate Temperature on the Properties of Cu(In,Ga)Se2 Thin Films Prepared by Sputtering from a Quaternary Target

2014 ◽  
Vol 1061-1062 ◽  
pp. 209-214 ◽  
Author(s):  
Zi Yue Yang ◽  
Li Dong Wang ◽  
Rui Xuan Song ◽  
Dong Xing Zhang ◽  
Wei Dong Fei
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Carrier Mobility ◽  
Hall Effect Measurement ◽  
Chalcopyrite Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Higher Carrier Mobility ◽  
Substrate Temperatures

Cu (In,Ga)Se2(CIGS) thin films were prepared by direct magnetron sputtering CIGS quaternary target at the substrate temperature varying from room temperature (RT) to 300 °C. The effects of substrate temperature on the structural and electrical properties of CIGS films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and Hall effect measurement. The CIGS thin films with a chalcopyrite structure were obtained between 100 and 300 °C and the crystallinity of films were enhanced with the increase of the substrate temperature from 100 to 300 °C. The film compositions were consisted with the target when the substrate temperatures were between RT and 200 °C, however, it deviated from the stoichiometry of the target when the substrate temperature was 300 °C. The CIGS films deposited at 200 °C had the higher carrier mobility of 3.522 cm2/Vs.

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