Defect Production Induced by Primary Ionization in Ion-Irradiated Oxide Superconductors

2000 ◽  
Vol 69 (11) ◽  
pp. 3563-3575 ◽  
Author(s):  
Norito Ishikawa ◽  
Akihiro Iwase ◽  
Yasuhiro Chimi ◽  
Osamu Michikami ◽  
Hironori Wakana ◽  
...  
Keyword(s):  
Oxide Superconductors ◽  
Defect Production ◽  
Primary Ionization

The measurement of thin-film reaction layers with high-resolution FESEM

1995 ◽  
Vol 53 ◽  
pp. 330-331
Author(s):  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Reaction Layer ◽  
Product Layer ◽  
Buffer Layers ◽  
Oxide Superconductors ◽  
Rate Limiting Step ◽  
Ceramic Thin Film ◽  
Backscattered Electron ◽  
Boundary Reaction

Thin-film reactions in ceramic systems are of increasing importance as materials such as oxide superconductors and ferroelectrics are applied in thin-film form. In fact, reactions have been found to occur during the growth of YBa2Cu3O6+x on ZrO2. Additionally, thin-film reactions have also been intentionally initiated for the production of buffer layers for the subsequent growth of high-Tc superconductor thin films. The problem is that the kinetics of ceramic thin-film reactions are not well understood when the reaction layer is very thin; that is, when the rate-limiting step is a phase-boundary reaction as opposed to diffusion of the reactants through the product layer. In this case, the reaction layer is likely to be laterally non-uniform. In the present study, the measurement of thin reaction-product layers is accomplished by first digitally acquiring backscattered-electron images in a high-resolution field-emission scanning electron microscope (FESEM) followed by image analysis. Furthermore, the problem of measuring such small thicknesses (e.g., 20-500nm) over lengths of interfaces longer than 3mm is addressed.

Atomic resolution AEM (ARAEM) of oxide superconductors

1992 ◽  
Vol 50 (1) ◽  
pp. 74-75
Author(s):  
Vinayak P. Dravid ◽  
H. Zhang ◽  
L.D. Marks ◽  
J.P. Zhang
Keyword(s):  
Electron Microscope ◽  
Field Emission ◽  
Atomic Resolution ◽  
Oxide Superconductors ◽  
Electron Holography ◽  
Analytical Electron ◽  
Analytical Electron Microscope ◽  
Point To Point ◽  
Single Instrument ◽  
Better Than

A 200 kV cold field emission gun atomic resolution analytical electron microscope (ARAEM, Hitachi HF-2000) has been recently installed at Northwestern. The ARAEM offers an unprecedented combination of atomic structure imaging of better than 0.20 nm nominal point-to-point resolution and about 0.10 nm line resolution, alongwith nanoscale analytical capabilities and electron holography in one single instrument. The ARAEM has been fully functional/operational and this paper presents some illustrative examples of application of ARAEM techniques to oxide superconductors. Additional results will be presented at the meeting.

scholarly journals Defect production in strained p-type Si1−xGex by Er implantation

2011 ◽  
Vol 109 (1) ◽  
pp. 013715 ◽  
Author(s):  
M. Mamor ◽  
B. Pipeleers ◽  
F. D. Auret ◽  
A. Vantomme
Keyword(s):  
Defect Production ◽  
P Type

Superconducting current in hybrid heterojunctions of metal-oxide superconductors: Size and frequency dependences

2005 ◽  
Vol 101 (3) ◽  
pp. 494-503 ◽  
Author(s):  
Yu. V. Kislinskii ◽  
P. V. Komissinski ◽  
K. Y. Constantinian ◽  
G. A. Ovsyannikov ◽  
T. Yu. Karminskaya ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxide Superconductors ◽  
Superconducting Current ◽  
Frequency Dependences

Tc versus ΔVA correlation in Cu-oxide superconductors

1990 ◽  
Vol 165-166 ◽  
pp. 983-984 ◽  
Author(s):  
Y. Ohta ◽  
T. Tohyama ◽  
S. Maekawa
Keyword(s):  
Oxide Superconductors

Primary Ionization Coefficient of Helium

1962 ◽  
Vol 80 (4) ◽  
pp. 898-908 ◽  
Author(s):  
D Kenneth Davies ◽  
F Llewellyn Jones ◽  
C G Morgan
Keyword(s):  
Ionization Coefficient ◽  
Primary Ionization

Tc IN MULTI-LAYER OXIDE SUPERCONDUCTORS

1989 ◽  
Vol 03 (01) ◽  
pp. 109-115 ◽  
Author(s):  
RUIBAO TAO ◽  
XIAO HU ◽  
MASUO SUZUKI
Keyword(s):  
Transition Temperature ◽  
Oxide Superconductors ◽  
Nearest Neighbour ◽  
Model Hamiltonian

A possible relation of the supeconducting transition temperature T c to the number of Cu-O planes coupled tightly in a Tl-Ca-Ba-Cu-O compound is discussed by means of Anderson's RVB theory. A model Hamiltonian has been suggested to include the tunneling of singlet pairs between the nearest neighbour Cu-O planes and our calculation shows that the experimental T c can be fitted well and raised obviously by increasing the number of Cu-O planes at first, then it becomes more and more insensitive as the number is increased beyond 4 or 5. The maximum T c may approach 144 K.

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