Tight-Binding Electronic State Calculations of Silicon Nanostructures with Local Disorders: Origin of the `F' Band Luminescence From Porous Silicon

2001 ◽  
Vol 70 (8) ◽  
pp. 2478-2484 ◽  
Author(s):  
Junichiro Kōga ◽  
Kengo Nishio ◽  
Toshio Yamaguchi ◽  
Fumiko Yonezawa
Keyword(s):  
Porous Silicon ◽  
Electronic State ◽  
Tight Binding ◽  
Silicon Nanostructures

The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures

2014 ◽  
Vol 116 (6) ◽  
pp. 063705 ◽  
Author(s):  
Le The Anh ◽  
Daniel Moraru ◽  
Muruganathan Manoharan ◽  
Michiharu Tabe ◽  
Hiroshi Mizuta
Keyword(s):  
Binding Energy ◽  
Electronic State ◽  
Silicon Nanostructures

Noise mediated regularity of porous silicon nanostructures

2009 ◽  
Vol 94 (13) ◽  
pp. 133103 ◽  
Author(s):  
J. Escorcia-Garcia ◽  
V. Agarwal ◽  
P. Parmananda
Keyword(s):  
Porous Silicon ◽  
Silicon Nanostructures

Microwave Effects on Chemical Functionalization of Hydrogen-Terminated Porous Silicon Nanostructures

2008 ◽  
Vol 112 (42) ◽  
pp. 16622-16628 ◽  
Author(s):  
Alain Petit ◽  
Michel Delmotte ◽  
André Loupy ◽  
Jean-Noël Chazalviel ◽  
François Ozanam ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Nanostructures ◽  
Chemical Functionalization ◽  
Microwave Effects

Electroluminescence and Photoluminescence Properties of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

2013 ◽  
Vol 667 ◽  
pp. 180-185
Author(s):  
M. Ain Zubaidah ◽  
F.S. Husairi ◽  
S.F.M. Yusop ◽  
Noor Asli Asnida ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Volume Ratio ◽  
Boron Doping ◽  
Peak Position ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Photoluminescence Properties ◽  
Current Densities ◽  
Pl Spectrum ◽  
P Type

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

Prolonged controlled delivery of nerve growth factor using porous silicon nanostructures

2017 ◽  
Vol 257 ◽  
pp. 51-59 ◽  
Author(s):  
Neta Zilony ◽  
Michal Rosenberg ◽  
Liran Holtzman ◽  
Hadas Schori ◽  
Orit Shefi ◽  
...  
Keyword(s):  
Nerve Growth Factor ◽  
Growth Factor ◽  
Porous Silicon ◽  
Controlled Delivery ◽  
Silicon Nanostructures ◽  
Nerve Growth

Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

2012 ◽  
Vol 576 ◽  
pp. 511-515
Author(s):  
N.A. Asli ◽  
Maslihan Ain Zubaidah ◽  
S.F.M. Yusop ◽  
Khairunnadim Ahmad Sekak ◽  
Mohammad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Surface Characteristic ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Force Microscopy ◽  
Etching Parameters ◽  
P Type ◽  
Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

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