Massive parallelization of SPICE device model evaluation on GPU-based SIMD architectures

Author(s):  
Amr M. Bayoumi ◽  
Yasser Y. Hanafy
2019 ◽  
Author(s):  
Evelyne Knapp ◽  
Andreas Schiller ◽  
Martin T. Neukom ◽  
Simon Züfle ◽  
Beat Ruhstaller

Author(s):  
Amy Poe ◽  
Steve Brockett ◽  
Tony Rubalcava

Abstract The intent of this work is to demonstrate the importance of charged device model (CDM) ESD testing and characterization by presenting a case study of a situation in which CDM testing proved invaluable in establishing the reliability of a GaAs radio frequency integrated circuit (RFIC). The problem originated when a sample of passing devices was retested to the final production test. Nine of the 200 sampled devices failed the retest, thus placing the reliability of all of the devices in question. The subsequent failure analysis indicated that the devices failed due to a short on one of two capacitors, bringing into question the reliability of the dielectric. Previous ESD characterization of the part had shown that a certain resistor was likely to fail at thresholds well below the level at which any capacitors were damaged. This paper will discuss the failure analysis techniques which were used and the testing performed to verify the failures were actually due to ESD, and not caused by weak capacitors.


Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.


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