A practical framework for managing uncertainties in power device model evaluation

2002 ◽  
Author(s):  
C.J. Kim
Keyword(s):  
Model Evaluation ◽  
Power Device ◽  
Device Model

scholarly journals 4H-SiC Drift Step Recovery Diode with Super Junction for Hard Recovery

Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 684 ◽  
Author(s):  
Xiaoxue Yan ◽  
Lin Liang ◽  
Xinyuan Huang ◽  
Heqing Zhong ◽  
Zewei Yang
Keyword(s):  
Silicon Carbide ◽  
Recovery Process ◽  
Wide Bandgap ◽  
Pulsed Power ◽  
Power Device ◽  
Structure Parameters ◽  
Electrical Characteristics ◽  
Device Model ◽  
Wide Bandgap Material ◽  
First Time

Silicon carbide (SiC) drift step recovery diode (DSRD) is a kind of opening-type pulsed power device with wide bandgap material. The super junction (SJ) structure is introduced in the SiC DSRD for the first time in this paper, in order to increase the hardness of the recovery process, and improve the blocking capability at the same time. The device model of the SJ SiC DSRD is established and its breakdown principle is verified. The effects of various structure parameters including the concentration, the thickness, and the width of the SJ layer on the electrical characteristics of the SJ SiC DSRD are discussed. The characteristics of the SJ SiC DSRD and the conventional SiC DSRD are compared. The results show that the breakdown voltage of the SJ SiC DSRD is 28% higher than that of the conventional SiC DSRD, and the dv/dt output by the circuit based on SJ SiC DSRD is 31% higher than that of conventional SiC DSRD. It is verified that the SJ SiC DSRD can achieve higher voltage, higher cut-off current and harder recovery characteristics than the conventional SiC DSRD, so as to output a higher dv/dt voltage on the load.

An Experimental Study on Compact Equivalent Circuit Modeling of SiC Schottky Barrier Didoes

2013 ◽  
Vol 740-742 ◽  
pp. 1093-1097
Author(s):  
Makiko Hirano ◽  
Tsuyoshi Funaki
Keyword(s):  
Schottky Barrier ◽  
Equivalent Circuit ◽  
Circuit Simulation ◽  
Power Conversion ◽  
Power Device ◽  
Circuit Modeling ◽  
Device Model ◽  
Equivalent Circuit Modeling ◽  
Simulation Results ◽  
Switching Characteristics

Circuit simulation is of assistance to design and evaluate a power conversion circuit. A compact and accurate power device model is indispensable for obtaining appropriate circuit simulation results. This paper studies the compact equivalent circuit modeling of SiC Schottky Barrier diode (SiCSBD) and evaluates the developed model in turn-off switching operation. Two SiCSBDs having different specification are modeled and evaluated in this paper. The results show that the switching characteristics of SiCSBDs can be modeled with the equivalent circuit, whose configurations and parameters are identified from static I-V and C-V characteristics.

Trends Related to Power Device Technologies (II)

2010 ◽  
Vol 130 (1) ◽  
pp. 32-36 ◽  
Author(s):  
Ikunorii TAKATA ◽  
Gourab Majumdar
Keyword(s):  
Power Device

Trends Related to Power Device Technologies (I)

2009 ◽  
Vol 129 (12) ◽  
pp. 817-820 ◽  
Author(s):  
Ikunori TAKATA ◽  
Gourab Majumdar
Keyword(s):  
Power Device
Sign in / Sign up

Export Citation Format

Share Document