scholarly journals Investigation on the Impact of Metallic Surface Contaminations on Minority Carrier Lifetime of a-Si:H Passivated Crystalline Silicon

2011 ◽  
Vol 8 ◽  
pp. 288-293 ◽  
Author(s):  
Florian Sevenig ◽  
Lena Breitenstein ◽  
Antje Oltersdorf ◽  
Karin Zimmermann ◽  
Martin Hermle
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Metallic Surface ◽  
The Impact

Behaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade Silicon

2012 ◽  
Vol 725 ◽  
pp. 141-144 ◽  
Author(s):  
Béchir Dridi Rezgui ◽  
Virginie Mong-The Yen ◽  
Isabelle Périchaud ◽  
Damien Barakel ◽  
Marcel Pasquinelli ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Solar Grade Silicon ◽  
Solar Cell Efficiency ◽  
Defect Generation ◽  
Cell Efficiency ◽  
The Impact ◽  
Oxygen Complexes

Light-induced defect generation seriously reduces the minority-carrier lifetime of crystalline silicon (c-Si) wafers which causes a decrease in solar cell efficiency. In this paper we investigate the impact of boron-oxygen complexes and iron impurities on the light induced minority-carrier lifetime degradation in c-Si, comparing electronic grade and upgraded metallurgical grade materials. For the later, the characteristic of the decay process is shown to be composed of a fast initial decay and a subsequent slow asymptotic decay. We conclude that the dissociation of iron-boron pairs must be taken into account to explain the light-induced lifetime reduction.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Minority carrier lifetime scan map in crystalline silicon wafers

1999 ◽  
Vol 70 (10) ◽  
pp. 4044-4046 ◽  
Author(s):  
J. Gervais ◽  
O. Palais ◽  
L. Clerc ◽  
S. Martinuzzi
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers

Minority Carrier Lifetime Improvement of Multicrystalline Silicon Using Combined Saw Damage Gettering and Emitter Formation

2015 ◽  
Vol 242 ◽  
pp. 126-132 ◽  
Author(s):  
George Martins ◽  
Ruy S. Bonilla ◽  
Toby Burton ◽  
P. MacDonald ◽  
Peter R. Wilshaw
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
High Concentration ◽  
Production Methods ◽  
Cell Efficiency ◽  
Annealing Conditions ◽  
Maximum Lifetime ◽  
Current Production

In this work we use Saw Damage Gettering (SDG) in combination with emitter formation to improve the minority carrier lifetime of highly contaminated multi-crystalline silicon wafers. This process is applied to wafers from the bottom of ingots, commonly referred to as the “red zone”, which are currently discarded since their high concentration of impurities limits the efficiency of solar cells produced therefrom. SDG is a potentially simple technique designed to upgrade these wafers. In this technique, bulk impurities are dissolved via annealing. The wafers are then cooled which generates a super-saturation of impurities in solution. The system then relaxes through the formation of precipitates in the saw damaged region. SDG is shown to be enhanced when using a temperature dependent cooling rate which maximizes the flux of impurities to the saw damaged regions. In addition, these benefits were observed even after an additional gettering process occurring during an emitter formation procedure. The SDG annealing conditions required to achieve the maximum lifetime were altered by the introduction of the emitter formation process. The enhancement generated by the SDG process may be sufficient to enable red-zone wafers to be processed is the same manner as higher quality no-red zone wafer wafers without adversely affecting the resultant cell efficiency. Due to its simplicity, it is expected that SDG can easily be incorporated into current production methods.

Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating

2012 ◽  
Vol 51 ◽  
pp. 03CA04
Author(s):  
Toshiyuki Sameshima ◽  
Koichi Betsuin ◽  
Tomohisa Mizuno ◽  
Naoki Sano
Keyword(s):  
Laser Heating ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime

Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers

2007 ◽  
Vol 131-133 ◽  
pp. 1-8 ◽  
Author(s):  
Nathan Stoddard ◽  
Bei Wu ◽  
Ian Witting ◽  
Magnus C. Wagener ◽  
Yongkook Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystal Growth ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Single Crystal Silicon ◽  
Minority Carrier Lifetime ◽  
Crystal Silicon ◽  
Growth Method ◽  
Screen Print ◽  
The Impact

A novel crystal growth method has been developed for the production of ingots, bricks and wafers for solar cells. Monocrystallinity is achievable over large volumes with minimal dislocation incorporation. The resulting defect types, densities and interactions are described both microscopically for wafers and macroscopically for the ingot, looking closely at the impact of the defects on minority carrier lifetime. Solar cells of 156 cm2 size have been produced ranging up to 17% in efficiency using industrial screen print processes.

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