Carbon Enhancement of SiO[sub 2] Nucleation in Buried Oxide Synthesis Computer Simulations and Secondary Ion Mass Spectroscopy Depth Profiling

Journal of The Electrochemical Society ◽

10.1149/1.1362550 ◽

2001 ◽

Vol 148 (5) ◽

pp. F92 ◽

Author(s):

A. A. Efremov ◽

V. G. Litovchenko ◽

G. Ph. Romanova ◽

A. V. Sarikov ◽

C. Claeys

Keyword(s):

Computer Simulations ◽

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Buried Oxide ◽

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Secondary ion mass spectroscopy ultrashallow depth profiling for Si/Si1−xGex/Si heterojunction bipolar transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588463 ◽

1996 ◽

Vol 14 (1) ◽

pp. 287 ◽

Author(s):

D. Krüger

Keyword(s):

Mass Spectroscopy ◽

Heterojunction Bipolar Transistors ◽

Depth Profiling ◽

Bipolar Transistors ◽

Secondary Ion Mass Spectroscopy ◽

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Accurate in depth profiling of As and P shallow implants by secondary ion mass spectroscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1634957 ◽

2004 ◽

Vol 22 (1) ◽

pp. 341 ◽

Author(s):

E. de Chambost ◽

A. Merkulov ◽

M. Schuhmacher ◽

P. Peres

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

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7384. Optimization of primary beam conditions for secondary ion mass spectroscopy depth profiling of shallow junctions in silicon using the Perkin-Elmer 6300

Vacuum ◽

10.1016/0042-207x(91)91191-p ◽

1991 ◽

Vol 42 (8-9) ◽

pp. 592

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Primary Beam ◽

Secondary Ion Mass Spectroscopy ◽

Shallow Junctions ◽

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High-Throughput Screening of Si–Ni Flux for SiC Solution Growth Using a High-Temperature Laser Microscope Observation and Secondary Ion Mass Spectroscopy Depth Profiling

ACS Combinatorial Science ◽

10.1021/co400009z ◽

2013 ◽

Vol 15 (6) ◽

pp. 287-290 ◽

Author(s):

Shingo Maruyama ◽

Aomi Onuma ◽

Kazuhisa Kurashige ◽

Tomohisa Kato ◽

Hajime Okumura ◽

...

Keyword(s):

High Temperature ◽

Mass Spectroscopy ◽

High Throughput ◽

High Throughput Screening ◽

Depth Profiling ◽

Microscope Observation ◽

Solution Growth ◽

Secondary Ion Mass Spectroscopy ◽

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Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC

Applied Physics Letters ◽

10.1063/1.4958144 ◽

2016 ◽

Vol 109 (1) ◽

pp. 011904 ◽

Author(s):

Paweł Piotr Michałowski ◽

Wawrzyniec Kaszub ◽

Alexandre Merkulov ◽

Włodek Strupiński

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

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Ultrashallow secondary ion mass spectroscopy depth profiling of doping spikes and Si/SiGe/Si heterostructures using different primary species

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589797 ◽

1998 ◽

Vol 16 (1) ◽

pp. 292 ◽

Author(s):

D. Krüger

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

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Optimized time-of-flight secondary ion mass spectroscopy depth profiling with a dual beam technique

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580874 ◽

1997 ◽

Vol 15 (3) ◽

pp. 460-464 ◽

Author(s):

K. Iltgen ◽

C. Bendel ◽

A. Benninghoven ◽

E. Niehuis

Keyword(s):

Mass Spectroscopy ◽

Time Of Flight ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Dual Beam ◽

Secondary Ion ◽

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Use of an SF[sub 5][sup +] polyatomic primary ion beam for ultrashallow depth profiling on an ion microscope secondary ion mass spectroscopy instrument

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591221 ◽

2000 ◽

Vol 18 (1) ◽

pp. 503 ◽

Author(s):

Greg Gillen ◽

Marlon Walker ◽

Phillip Thompson ◽

Joe Bennett

Keyword(s):

Mass Spectroscopy ◽

Ion Beam ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

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Quantitative depth profiling of Al in SiC using time of flight–secondary ion mass spectroscopy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/6.0000905 ◽

2021 ◽

Vol 39 (3) ◽

pp. 033204

Author(s):

Vincent S. Smentkowski ◽

Shubhodeep Goswami

Keyword(s):

Mass Spectroscopy ◽

Time Of Flight ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

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7383. Optimization of primary beam conditions for secondary ion mass spectroscopy depth profiling of shallow junctions in silicon using a Cameca IMS-3f

Vacuum ◽

10.1016/0042-207x(91)91190-y ◽

1991 ◽

Vol 42 (8-9) ◽

pp. 592

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Primary Beam ◽

Secondary Ion Mass Spectroscopy ◽

Shallow Junctions ◽

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