7384. Optimization of primary beam conditions for secondary ion mass spectroscopy depth profiling of shallow junctions in silicon using the Perkin-Elmer 6300

Vacuum ◽  
1991 ◽  
Vol 42 (8-9) ◽  
pp. 592
Keyword(s):  
Mass Spectroscopy ◽  
Depth Profiling ◽  
Primary Beam ◽  
Secondary Ion Mass Spectroscopy ◽  
Shallow Junctions ◽  
Secondary Ion

Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC

2016 ◽  
Vol 109 (1) ◽  
pp. 011904 ◽  
Author(s):  
Paweł Piotr Michałowski ◽  
Wawrzyniec Kaszub ◽  
Alexandre Merkulov ◽  
Włodek Strupiński
Keyword(s):  
Mass Spectroscopy ◽  
Depth Profiling ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

A PAIR-DIFFUSION MODEL FOR ARSENIC IN SILICON CONSIDERING ARSENIC DEACTTVATION-INDUCEDINTERSTITIAL-SDLICON EMISSION

1997 ◽  
Vol 469 ◽  
Author(s):  
Masayuki Hiroi ◽  
Takeo Ikezawa ◽  
Masami Hane ◽  
Hiroshi Matsumoto
Keyword(s):  
Point Defect ◽  
Diffusion Model ◽  
Mass Spectroscopy ◽  
Beam Energy ◽  
Binding Energies ◽  
Primary Beam ◽  
Secondary Ion Mass Spectroscopy ◽  
Deactivation Process ◽  
Secondary Ion

ABSTRACTAn arsenic diffusion model was proposed with the emphasis on a new deactivation process which accounts for excess interstitial silicon generation. Appropriate parameter set for the binding energies of arsenic-point defect pairs were obtained for reproducing various arsenic activation levels and interaction with boron in the case of co-diffusion. Such parameters were extracted from the data of carefully performed secondary ion mass spectroscopy with lowering the primary beam energy.

Sign in / Sign up

Export Citation Format

Share Document