The Effect of High Temperature Anneal on Electrical Stress‐Generated Defects in Metal Oxide Semiconductor Structures

1994 ◽  
Vol 141 (8) ◽  
pp. 2140-2145 ◽  
Author(s):  
M. Berger ◽  
O. Schwartsglass ◽  
J. Shappir
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Electrical Stress ◽  
High Temperature Anneal

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
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