Effect of high‐temperature anneal on interface states generation in stressed metal‐oxide‐semiconductor devices

1991 ◽  
Vol 58 (6) ◽  
pp. 598-600 ◽  
Author(s):  
M. Berger ◽  
E. Avni ◽  
J. Shappir
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Temperature Anneal

NH3Plasma Pretreatment of 4H-SiC(000\bar1) Surface for Reduction of Interface States in Metal–Oxide–Semiconductor Devices

2010 ◽  
Vol 3 (2) ◽  
pp. 026201 ◽  
Author(s):  
Yoshinori Iwasaki ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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